Algalnp series luminous diode and epitaxial wafer used for making said diode


Application Number: 00108101
Application Date: 2000.04.27
Publication Number: 1271965
Publication Date: 2000.11.01
Priority Information: 1999/4/27 JP 120121/99; 1999/6/25 JP 180539/99
International: H01L33/00
Applicant(s) Name: Hitachi Cable Co., Ltd.
Address:
Inventor(s) Name: Shibata Kenji;Shibata Masachi;Imano Taichiro
Patent Agency Code: 72001
Patent Agent: liang yong
Abstract A high potential barrier is prevented from being formed on a hetero-boundary surface between a p-type AlGaInP cladding layer and a p-type GaP window layer by forming an insertion layer having a smaller band gap energy than that of the p-type AlGaInP cladding layer therebetween. The insertion layer serves as a forward voltage reducing layer, and the forward voltage of a LED is lowered.