Buried metal contact structure and manufacture of semiconductor FET device


Application Number  00129498 Application Date  2000.12.29
Publication Number  1308378 Publication Date  2001.08.15
Priority Information   2000/1/12 US 09/481914  
International
Classification
 H01L29/78;H01L27/12;H01L21/336  
Applicant(s) Name  IBM Corp.  
Address    
Inventor(s) Name  Feng Jiaxin  
Patent Agency Code  72001 Patent Agent  chen ji
AbstractAn SOI MOSFET device is described having a body region positioned between and separating the source and the drain. A buried metal via is placed directly underneath the body region and is aligned with the gate. The buried metal contacts the body region but not the source or the drain. The structure includes a metal interconnect directly underneath the device, wherein one or more interconnect layers contact the silicon insulator from below the device through the buried oxide. In this manner, the bottom of source or drain diffusion area as well as the body region can be coupled. The body contact, in particular, has an extremely low resistance along the width of the device when compared to a conventional body contact structure.