Circular structure of contact hole in multiple emitter area diffusion layer

Application Number: 00107399
Application Date: 2000.05.15
Publication Number: 1324112
Publication Date: 2001.11.28
Priority Information:
International: H01L29/41
Applicant(s) Name: Beijing Puluo Qiangsheng Semiconductor Co., Ltd.
Address:
Inventor(s) Name: Chen Qingfeng
Patent Agency Code: 00000
Patent Agent:
Abstract A circular structure of contacting hole for multi-emsission zone diffusion layer can be used to largely reduce the volume of semi-conductor crystal particles and to relax the current concentrated phenomenon at diffusion layer bending edge of emission zone. It mainly features as to set several dimple common sets at diffusion layer of each emission of polygon (or circular) to divided the emission zone diffusion layer to decrease the contacting hole of the emission zone diffusion layer for raising the impedance and metal contacts, and to set blocking material composed by carbondioxide, carbon nitride and phosphorized carbon glass into the several dimple to reduce the volume of semiconductor crystal particles for largely decreasing the production cost.

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