Cleaning liquid and manufacturing method of semi-conductor device using said cleaning liquid

Application Number: 00106995
Application Date: 2000.04.27
Publication Number: 1271767
Publication Date: 2000.11.01
Priority Information: 1999/4/28 JP 121225/99
International: C11D7/32;H01L21/461
Applicant(s) Name: Mitsubishi Electric Corp.
Inventor(s) Name: Kanno Itaru;Muranaka Seishi;Yamamoto Hiromasa
Patent Agency Code: 72001
Patent Agent: yang kai
Abstract Resist residue attached on a second interconnection layer and a filling metal film exposed on a silicon substrate is removed using a cleaning agent including condensed ammonium phosphate as a main constituent, urea or a modified component of urea as an adjuvant, and an acid. The hydrogen-ion concentration of the cleaning agent is at least 10-4 mol/l. Thus, if a part of the filling film filling the connection hole is exposed by borderless interconnection, the resist residue is surely removed without dissolving the filling layer or a conductive layer such as an interconnection layer in the cleaning agent.