Corrosion technique of anisotropic nitride by inlay corrosion method


Application Number: 00106557
Application Date: 2000.04.12
Publication Number: 1271871
Publication Date: 2000.11.01
Priority Information: 1999/4/26 US 09/299,137
International: G03F7/004;H01L21/311;H01L21/336;H01L21/762;H01L21/823
Applicant(s) Name: IBM Corp.
Address:
Inventor(s) Name: D. C. Boyd;S. M. Boerns;H. I. Hannafy
Patent Agency Code: 11038
Patent Agent: wang yonggang
Abstract A process and etchant gas composition for anisotropically etching a trench in a silicon nitride layer of a multilayer structure and an etchant gas composition. The etchant gas composition has an etchant gas including a polymerizing agent, a hydrogen source, an oxidant, and a noble gas diluent. The oxidant preferably includes a carbon-containing oxidant component and an oxidant-noble gas component. A power source is applied to the structure to control the directionality of the plasma formed by exciting the power isolation of the etchant gas. The etchant gas can be used during a nitride etch step in a process for making a metal oxide semiconductor field effect transistor.