Device for producing high temperature silicon carbide semiconductor material


Application Number: 00109107
Application Date: 2000.06.07
Publication Number: 1327092
Publication Date: 2001.12.19
Priority Information:
International: C30B25/02;C30B29/36
Applicant(s) Name: Semiconductor Inst., Chinese Academy of Sciences
Address:
Inventor(s) Name: Li Jinmin;Sun Guosheng;Zhu Shirong
Patent Agency Code: 11021
Patent Agent: tang baobeng
Abstract The high temperature silicon carbide semiconductor material producing equipment includes one front stage sample introducing chamber, one sample transferring unit, one sample growth unit, one inserting board valve, and one air exhauster, and the sample transferring unit, the front stage sample introducing chamber, the inserting board valve and the sample growth unit are connected and sealed successively in straight line. The air exhauster is connected below the front stage sample introducing chamber and the sample growth unit. The present invention is one novel high-vacuum wide-band gap silicon carbide preparing equipment with both high growth rate and in-situ and real-time monitoring and can be used to prepare material for producing qualified silicon carbide devices.