Electron beam exposuring system and method thereof


Application Number: 00103090
Application Date: 2000.02.24
Publication Number: 1264850
Publication Date: 2000.08.30
Priority Information: 1999/2/24 JP 047030/1999; 1999/2/25 JP 048625/1999; 1999/10/15 JP 294017/1999; 1999/12/7 JP 347586/1999
International: G03F7/09;G03F7/20;H01L21/027
Applicant(s) Name: NEC Corp.
Address:
Inventor(s) Name: Yamashita Ko
Patent Agency Code: 11021
Patent Agent: liu xiaofeng
Abstract This invention relates to a scattering-angle limiting type of electron-beam exposure system having a mask comprising a scattering region and a limiting aperture which limits the amount of scattered electrons passing through the mask, comprising a first limiting aperture fixed at or near a crossover plane and having a central opening and a closed elongated opening surrounding the central opening; and a second limiting aperture shiftable along an optical axis and having a central opening and a closed elongated opening surrounding the central opening, as well as an electron-beam exposure process using the system.