Electronic beam explosure mask and method for making semiconductor device with same


Application Number: 00109322
Application Date: 2000.05.26
Publication Number: 1275797
Publication Date: 2000.12.06
Priority Information: 1999/5/28 JP 150705/99
International: G03F7/00;H01L21/027
Applicant(s) Name: NEC Corp.
Address:
Inventor(s) Name: Miyasaka Mitsuyoshi
Patent Agency Code: 11219
Patent Agent: mu dejun
Abstract A mask for electron beam exposure used in a process for exposing a wafer with predetermined patterns for a chip by an EB projection lithography system. The mask comprises: a grillage area; a plurality of thin film areas surrounded by the grillage area and having a thickness thinner than that of the grillage area; and a plurality of mask pattern areas each of which is formed within respective one of the thin film areas. Each of the mask pattern areas has mask patterns corresponding to patterns of a subfield obtained by dividing the patterns for a chip into a plurality of areas having substantially the same shape and size. The wafer is exposed with predetermined patterns for a chip by performing, for each of the mask pattern areas, a step of irradiating an electron beam onto the mask for electron beam exposure such that the center of an area irradiated by the electron beam coincides with the center of each of the mask pattern areas.