Electronic beam exposure method


Application Number: 00107637
Application Date: 2000.05.25
Publication Number: 1274870
Publication Date: 2000.11.29
Priority Information: 1999/5/25 JP 145579/99
International: G03F7/20;H01L21/027
Applicant(s) Name: NEC Corp.
Address:
Inventor(s) Name: Ohinata Hideo
Patent Agency Code: 11219
Patent Agent: mu dejun
Abstract In an electron beam exposing method to be used for the manufacture of a semiconductor device, the fluctuation of the pattern dimension of the central part of a plotting pattern formed due to the difference of the density of the plotting pattern is corrected by the adjustment of exposure, and the fluctuation of the pattern dimension of the edge part of the plotting pattern formed due to the difference of the density of the plotting pattern is corrected by an auxiliary exposure pattern 4. The fluctuation correction of the pattern dimension by the adjustment of the exposure and the fluctuation correction of the pattern dimension by the auxiliary exposure pattern is operated by using two or one mask.