Ferroelectric random storage unit with internal oxygen source and method for releasing oxygen


Application Number: 00108782
Application Date: 2000.06.02
Publication Number: 1276629
Publication Date: 2000.12.13
Priority Information: 1999/6/4 US 09/325,857
International: H01L21/82;H01L27/04
Applicant(s) Name: IBM Corp.
Address:
Inventor(s) Name: C. T. Black;S. Carbla;Jr;A. Geller
Patent Agency Code: 11038
Patent Agent: wang sibeng
Abstract An integrated ferroelectric/CMOS structure which comprises at least a ferroelectric material, a pair of electrodes in contact with opposite surfaces of the ferroelectric material, where the electrodes do not decompose at deposition or annealing, and an oxygen source layer in contact with at least one of said electrodes, said oxygen source layer being a metal oxide which at least partially decomposes during deposition and/or subsequent processing is provided as well as a method of fabricating the same.