Field emission type electron source and its manufacturing method

Application Number: 00107058
Application Date: 2000.04.24
Publication Number: 1271958
Publication Date: 2000.11.01
Priority Information: 1999/4/23 JP 115717/99; 1999/10/18 JP 295953/99; 1999/10/18 JP 295954/99
International: H01J1/304;H01J9/02
Applicant(s) Name: Matsushita Electric Works, Ltd.
Inventor(s) Name: Watanabe Yoshifumi;Kondo Yukihiro;Aisawa Koichi
Patent Agency Code: 31100
Patent Agent: sun jingguo
Abstract The invention discloses a field emission type electron source and its manufacturing method. The field emission-type electron source (10) is provided with a conductive substrate (1), a semiconductor layer formed on a surface of the conductive substrate (1), at least a part of the semiconductor layer being made porous, and a conductive thin film (7) formed on the semiconductor layer. Electrons injected into the conductive substrate (1) are emitted from the conductive thin film (7) through the semiconductor layer by applying a voltage between the conductive thin film (7) and the conductive substrate (1) in such a manner that the conductive thin film (7) acts as a positive electrode against the conductive substrate (1). The semiconductor layer includes a porous semiconductor layer (6) in which columnar structures (21) and porous structures (25)coexist, an average dimension of the porous structures is smaller than or equal to 2 mum.