Field-emitting device and it mfg. method, and displaying device therewith

Application Number: 00109213
Application Date: 2000.06.14
Publication Number: 1278104
Publication Date: 2000.12.27
Priority Information: 1999/6/16 KR 22623/99; 2000/6/5 KR 30803/2000
International: H01J1/304;H01J9/02;H01J29/04;H01J31/12;H01L21/00
Applicant(s) Name: Chang Chin
Inventor(s) Name: Chang Chin;Jeong Hevi-Chae;Lim Sung-Hoon
Patent Agency Code: 72002
Patent Agent: du juan
Abstract A field emitter having a high current density even at a low voltage using a carbon nanotube film, a method of manufacturing the same, and a field emission display device having the field emitter, are provided. The field emitter includes an insulating substrate, a thin film transistor formed on the insulating substrate, the thin film transistor having a semiconductor layer, a source electrode, a drain electrode and a gate electrode, and an electron emitting unit formed of a carbon nanotube film on the drain electrode of the thin film transistor. The thin film transistor can be a coplanar-type transistor, a stagger-type transistor, or an inverse stagger-type transistor. The surface of a portion of the drain electrode, which contacts the carbon nanotube film, contains catalytic metal which is transition metal such as nickel or cobalt. Alternatively, the drain electrode itself can be formed of catalytic metal for carbon nanotube growth.