High density or/no type quick erasable memory, and its programing method


Application Number: 00105203
Application Date: 2000.03.29
Publication Number: 1278102
Publication Date: 2000.12.27
Priority Information: 1999/6/22 KR 23533/99
International: G11C16/10
Applicant(s) Name: Samsung Electronics Inc.
Address:
Inventor(s) Name: Lee Pyong-Hun;Lim Young-Ho
Patent Agency Code: 11105
Patent Agent: sun lubeng
Abstract A flash memory device and a programming method for use in a flash memory device are disclosed. According to the programming method, first, one of data bits to be programmed starts to be programmed in a corresponding memory cell. Then, before the previous program operation is ended, the next of the data bits starts to be programmed. By such a program algorithm, although the integration degree of the flash memory device is increased, a sufficient amount of current required to program can be supplied without an increment of the size of the integrated circuit die due to the charge pump circuit.