High-frequency high-speed semiconductor device with wide range of safety operation


Application Number: 00109335
Application Date: 2000.05.29
Publication Number: 1326228
Publication Date: 2001.12.12
Priority Information:
International: H01L29/70
Applicant(s) Name: Puluoqiangsheng Semiconductor Co Ltd, Beijing
Address:
Inventor(s) Name: Chen Qingfeng
Patent Agency Code: 00000
Patent Agent:
Abstract A high-speed high-frequency semiconductor device with wide safe working range features that when the base and emitter patterns are formed on the silicon substrate, the silicon substrate is etched to generate a impurity diffusion in three directions and a diffusion end characteristic curvature to buffer the current collection at this position and obtain shallow diffusion depth.