Integrated device of laser and photoelectric switch


Application Number: 00107893
Application Date: 2000.06.29
Publication Number: 1331494
Publication Date: 2002.01.16
Priority Information:
International: H01L27/15;H01S5/00;H01S5/026
Applicant(s) Name: Inst of Semiconductors, Chinese Academy of Sciences
Address:
Inventor(s) Name: Lin Shiming
Patent Agency Code: 11021
Patent Agent: tang baobeng
Abstract A laser and photoelectric switch integrated device is prepared through sequentially growing n-type GaAs buffer layer, n-type AlAs/Al0.1Ga0.9As, n-type Al0.25Ga0.75As lower limit layer, active GaAs layer, p-type Al0.25Ga0.75As upper limit layer, p-type AlAs layer, p-type AlAs/Al0.1Ga0.9As layer and p-type Al0.1Ga0.9As ohm contact layer on n-type GaAs substrate to form VSCEL structure layer, growing high-corrosion stopping AlAs layer, and growing MISS on VCSEL. Its epitaxial layers are sequentially p-GaAs, n-GaAs and AlAs layers.