Low temp. low magnetic field large magnetic resistance effect oxide material and prepn. method thereof


Application Number: 00110845
Application Date: 2000.01.21
Publication Number: 1259500
Publication Date: 2000.07.12
Priority Information:
International: C04B35/01;C04B35/622;C04B35/64;H01L43/12
Applicant(s) Name: Shandong Univ.
Address:
Inventor(s) Name: Hu Jifan;Qin Hongwei;Zhao Wenjin
Patent Agency Code: 37200
Patent Agent: liu xudong
Abstract The present invention relates to sensing and magnetic memory technology, its main content is to weigh La2O3, MnO2, Ni2O3, CaCo3 according to the atomic ratio of molecular formula La1-xCaxMn1-yNiyO3, then mixing uniformly, grinding, pulverizing and sintering to obtain oxide material with low magnetic field large magneto resistance effect under low temp.. The present invention possesses the characteristics of low temp. low magnetic field large magnetoresistance delta R/Ro change, it also possesses the advantages of simple technology, low prodn. cost etc.