Method for forming barrier layer and its formed structure

Application Number  00128530 Application Date  2000.11.22
Publication Number  1354497 Publication Date  2002.06.19
Priority Information    
Applicant(s) Name  Lianhua Electronic Co. Ltd.  
Inventor(s) Name  Fang Zhaoxun;Xie Wenyi;You Cuirong  
Patent Agency Code  11105 Patent Agent  huang min
AbstractA method for forming a barrier layer on a substrate in working procedure of processing copper includes following steps. A conduction structure layer is formed on a substrate, then a dielectric layer is formed on the conducting structure layer. Moreover, these is an opening on the dielectric layer to expose the substrate. An oxygen-absorbing layer is formed on the dielectric layer, being filled into the opening. In the following high temperature procedure, the oxygen-absorbing layer reacts with oxygen atom in the dielectric layer, so as to form another barrier layer. The dielectric layer is a main material containing oxygen. The oxygen-absorbing laeyr is any metal, such as titanium or tantalum etc.