Method for forming barrier layer and its formed structure


Application Number  00128530 Application Date  2000.11.22
Publication Number  1354497 Publication Date  2002.06.19
Priority Information    
International
Classification
 H01L21/320;H01L21/283;H01L21/768  
Applicant(s) Name  Lianhua Electronic Co. Ltd.  
Address    
Inventor(s) Name  Fang Zhaoxun;Xie Wenyi;You Cuirong  
Patent Agency Code  11105 Patent Agent  huang min
AbstractA method for forming a barrier layer on a substrate in working procedure of processing copper includes following steps. A conduction structure layer is formed on a substrate, then a dielectric layer is formed on the conducting structure layer. Moreover, these is an opening on the dielectric layer to expose the substrate. An oxygen-absorbing layer is formed on the dielectric layer, being filled into the opening. In the following high temperature procedure, the oxygen-absorbing layer reacts with oxygen atom in the dielectric layer, so as to form another barrier layer. The dielectric layer is a main material containing oxygen. The oxygen-absorbing laeyr is any metal, such as titanium or tantalum etc.