Method for forming refraction-metal-silicide layer of semi-conductor device


Application Number: 00108279
Application Date: 2000.04.28
Publication Number: 1272686
Publication Date: 2000.11.08
Priority Information: 1999/4/28 JP 121410/1999
International: H01L21/283;H01L21/3205;H01L21/336;H01L21/8238
Applicant(s) Name: NEC Corp.
Address:
Inventor(s) Name: Hamanaka Nobuaki;Iue Ken;Sangi Iku
Patent Agency Code: 11021
Patent Agent: li yue
Abstract A method for forming a silicide of a metal with high-melting-point in a semiconductor device includes the step of removing a higher-density impurity area which acts for prevention of forming the metal-silicide layer on the surface of the impurity-diffused region between the steps of implanting impurities to form an impurity-implanted region and annealing for reactions of cobalt and silicon of the diffused layer. The above-mentioned method of forming the metal-silicide layer on the surface of the impurity-diffused region proceeds smoothly to thereby prevent degradation of the initial gate withstand voltage and a higher sheet resistance.