Method for making semiconductor chip suitable to be made of electrically conductive liquid material

Application Number: 00108074
Application Date: 2000.06.08
Publication Number: 1328341
Publication Date: 2001.12.26
Priority Information:
International: H01L21/283;H01L21/60;H01L21/768
Applicant(s) Name: Qunyi Science and Technology Co Ltd
Address:
Inventor(s) Name: Shen Mingdong
Patent Agency Code: 72002
Patent Agent: li shumeng
Abstract A method for making semiconductor chip suitable for liquid-state electric conductive material is disclosed. Said semiconductor chip is composed of at least two metal layer partitioned by an insulating layer, and other metal layer under the lower metal layer. Several concave weld pads are formed on the surface of said chip. The insulating material is loaded in the concave weld pad. The insulating material in the center of concave weld pad is removed, so the residual insulating material forms the isolating layer between metal layers. When liquid-state short circuit between metal layers will produce.

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