Method for mfg. semiconductor device with element separating insulation film


Application Number: 00109099
Application Date: 2000.06.07
Publication Number: 1276626
Publication Date: 2000.12.13
Priority Information: 1999/6/8 JP 161682/1999
International: H01L21/336;H01L21/8234;H01L27/088;H01L29/78
Applicant(s) Name: NEC Corp.
Address:
Inventor(s) Name: Kiyomi Masakuni
Patent Agency Code: 11021
Patent Agent: wang huimin
Abstract The present invention relates to a manufacturing method for a semi-conductive device with element isolation. There is anti-oxidation film 301 formed on the total surface of the semiconductor base plates 100 of element domains 501 and 502 on which there are many element separate oxide films 101 and thin oxide film 201 on the active domain formed. After semiconductor base plate 100 of element domain 501 masks the developed resistant film 401 is developed, the first gate oxide film is formed. And the semiconductor base plate 100 of element domain 502 masks the opened resistant film 401 is further developed, the second gate oxidation is carrying on. It avoids that there is unnecessary oxide film formed on the base plate so as to reduce the steps of etching before gate oxidation.