Method for providing double work function doping and protection insulation cap

Application Number: 00108790
Application Date: 2000.06.02
Publication Number: 1276623
Publication Date: 2000.12.13
Priority Information: 1999/6/4 US 09/325,941
International: H01L21/28;H01L21/336;H01L21/8234
Applicant(s) Name: IBM Corp.
Inventor(s) Name: Jack A. Mandman;Gari B. Blongno;Lamadandla Divacaruney
Patent Agency Code: 11038
Patent Agent: wang yonggang
Abstract A method for providing dual work function doping and borderless array diffusion contacts includes providing a semiconductor substrate, a gate insulator, a conductor on the gate insulator, an insulating cap on the conductor and insulating spacers on sidewalls of a portion of the conductor and the insulating cap. The method also includes doping portions of the semiconductor substrate and the conductor with a first conductive type and other portions with a second conductive type. The conductor may be annealed such that dopants of the first and second conductive types spread over the respective conductors.