Method of forming silicon-germanium base zone of heterojunction bipolar transistor


Application Number  00129493 Application Date  2000.12.29
Publication Number  1304169 Publication Date  2001.07.18
Priority Information   2000/1/10 US 09/480033  
International
Classification
 H01L21/20;H01L21/328  
Applicant(s) Name  International Business Machine Corp.  
Address    
Inventor(s) Name  Huang Fengyi  
Patent Agency Code  72001 Patent Agent  chen ji
AbstractA process for forming a silicon-germanium base of a heterojunction bipolar transistor. First, a silicon substrate having a mesa surrounded by a trench is formed. Next, a silicon-germanium layer is deposited on the substrate and the portion of the silicon-geranium layer adjacent the mesa is removed to form the silicon-germanium base. In a second embodiment, the process comprises the steps of forming a silicon substrate having a mesa surrounded by a trench, forming a dielectric layer in the trench adjacent the mesa, and growing a silicon-germanium layer on the mesa top surface using selective epitaxial growth to form the silicon-germanium base.