Method of testing memory updating rate


Application Number: 00108921
Application Date: 2000.05.17
Publication Number: 1324078
Publication Date: 2001.11.28
Priority Information:
International: G06F11/00;G11C29/00
Applicant(s) Name: Yingyeda Co., Ltd.
Address:
Inventor(s) Name: Ma Jinbai;Zhang Youquan;Lin Guangxin
Patent Agency Code: 11105
Patent Agent: ma ying
Abstract A refrshing rate test method for storage to be used for checking whether the storage refreshing rate is normal or not in computer system works as to record storage refreshing times in number and number of occuring times of CMOS cycle break off, then to use setting frequency and number of occuring of CMOS cycle break off as well as the obtained number of times of storage refreshing to judge that the number of times of storage refreshing rate is normal or not. The present invention can increase the test accuracy of storage refreshing rate test with no cost increasing due to utilizing the original resources of the computer system.