Microtransistor photoelectric element, its manufacture and building material and generating system using the same


Application Number  00128618 Application Date  2000.07.14
Publication Number  1284749 Publication Date  2001.02.21
Priority Information   1999/7/14 JP 199846/1999  
International
Classification
 H01L31/04;H01L31/08;H01L31/18  
Applicant(s) Name  Canon Co., Ltd.  
Address    
Inventor(s) Name  Shoisaki Atsushi;Sano Masashi;Satani Toshimitsu  
Patent Agency Code  11038 Patent Agent  wang sibeng
AbstractA photovoltaic element having a stacked structure comprising a first semiconductor layer containing no crystalline phase, a second semiconductor layer containing approximately spherical microcrystalline phases, and a third semiconductor layer containing pillar microcrystalline phases which are stacked in this order, wherein said spherical microcrystalline phases of said second semiconductor layer on the side of said third semiconductor layer have an average size which is greater than that of said spherical microcrystalline phases of said second semiconductor layer on the side of said first semiconductor layer.