Optical diode complementary metal oxide semiconductor image sensor production method

Application Number: 00107096
Application Date: 2000.04.29
Publication Number: 1322014
Publication Date: 2001.11.14
Priority Information:
International: H01L27/146;H01L31/14;H01L31/18
Applicant(s) Name: Shuanghan Science & Technology Co. Ltd.
Address:
Inventor(s) Name: Guo Dongzheng;Liao Chongwei;Jin Yaqin
Patent Agency Code: 11105
Patent Agent: tao fengbei
Abstract The production method of photodiode complementary metal oxide semiconductor (CMOS) image sensor includes the following steps: using photoetching technique and etching technique to form conductor layer and dielectric layer on the matrix, making conductor layer form transistor grid conductor layer and several virtual grids positioned in photosensitive region of diode, and form light doping zone of source and drain and doping zone of photosensitive region of diode, and forming gap walls in the grid conductor layer and virtual grid side wall and making gap walls connect, forming heavy doping zone of source and drain in the matrix, and making automatic alignment with metal silicide preparatino process so as to form metal silicide on the grid conductor layer and source/drain.