Optimized penetrance injection for simutaneously forming silicon-metal compacitor


Application Number  00128775 Application Date  2000.09.20
Publication Number  1289142 Publication Date  2001.03.28
Priority Information   1999/9/21 US 09/400676  
International
Classification
 H01L21/265;H01L21/324;H01L29/78  
Applicant(s) Name  International Business Machines Inc.  
Address    
Inventor(s) Name  D.D. Kerbao;D.L. Harami  
Patent Agency Code  72001 Patent Agent  lu xinhua
AbstractA method of forming a diffusion region in a silicon substrate having low-resistance, acceptable defect density, reliability and process control comprising the steps of: (a) subjecting a silicon substrate to a first ion implantation step, said first ion implantation step being conducted under conditions such that a region of amorphized Si is formed in said silicon substrate; (b) subjecting said silicon substrate containing said region of amorphized Si to a second ion implantation step, said second ion implantation step being carried out by implanting a dopant ion into said silicon substrate under conditions such that the peak of implant of said dopant ion is within the region of amorphized Si; and (c) annealing said silicon substrate under conditions such that said region of amorphized Si is re-crystallized thereby forming a diffusion region in said silicon substrate is provided.