Organic anti-reflection polymer and preparation method thereof


Application Number: 00107842
Application Date: 2000.06.22
Publication Number: 1278529
Publication Date: 2001.01.03
Priority Information: 1999/6/22 KR 23382/1999
International: C07C251/64;C08F120/10;C09D133/08;H01L31/036
Applicant(s) Name: Hyundai Electronic Industries Co., Ltd.
Address:
Inventor(s) Name: Chung Won-Ho;Hong Sung-Un;Paek Gi-Ho
Patent Agency Code: 72002
Patent Agent: gan ling
Abstract Polymers are disclosed having the following formula 1 or 2. Polymers of the present invention can be used as an ARC material useful for submicrolithography processes using 248 nm KrF, 193 nm ArF and 157 nm F2 lasers. The polymers contain a chromophore substituent that exhibits sufficient absorbance at the wavelengths useful for the submicrolithography process. The ARC prevents back reflection of light from lower layers and the alteration of the CD by diffracted and reflected light from the lower layers. The ARC also eliminates standing waves and reflective notching due to the optical properties of lower layers on the wafer and to changes in the thickness of the photosensitive film applied thereon, thereby resulting in the stable formation of ultrafine patterns suitable for 64M, 256M, 1G, 4G and 16G DRAMs and a great improvement in the production yield.