Process for preparing diode with ceramic substrate and crystal grain structure

Application Number: 00109203
Application Date: 2000.06.13
Publication Number: 1328342
Publication Date: 2001.12.26
Priority Information:
International: H01L21/50;H05K3/30
Applicant(s) Name: Xu Shengxiong
Inventor(s) Name: Xu Shengxiong
Patent Agency Code: 11127
Patent Agent: mu kuailiang
Abstract A technology for preparing diodes with ceramic substrate and grain structure includes such steps as cutting slots on substrate structure to form several hundreds units, forming lower conductor on each unit, printing resistance, adhering diode grains, coating packing material on substrate, exposing the top of grain, printing or coating upper conductor to connect to the edge of each unit, breaking the substrate to become strips, forming terminals on its sides, sintering, breaking the strip to become single units, attaching the weldable tin on terminal surface, electric test and package.