Process for preparing semiconductor mode converter

Application Number: 00124757
Application Date: 2000.09.13
Publication Number: 1343030
Publication Date: 2002.04.03
Priority Information:
International: H01L33/00;H01S5/026
Applicant(s) Name: Inst of Semiconductor, Chinese Academy of Sciences
Inventor(s) Name: Liu Guoli;Wang Yu;Zhu Hongliang
Patent Agency Code: 11021
Patent Agent: tang baobeng
Abstract A process for preparing semiconductor mode converter includes such steps as growing waveguide layer on the lower of indium phosphide substrate, growing isolating indium phosphide layer and active InGaAsP layer as well as indium phosphide cover layer on waveguide, depositing a layer of medium film on the cover layer, etching the film to obtain pattern, selectively etching indium phosphide, selectively etching InGaAsP, etching out the medium film, and growing indiuim phosphide cover layer.