Quantum trap laser and Schottky-barrier contact method for limiting current


Application Number: 00109166
Application Date: 2000.06.13
Publication Number: 1328369
Publication Date: 2001.12.26
Priority Information:
International: H01S5/343
Applicant(s) Name: Zhongliang Laser High-Technology Co Ltd, Shenzhen City
Address:
Inventor(s) Name: Wang Lijun
Patent Agency Code: 11223
Patent Agent: zhang juzeng
Abstract A quantum well laser and its Schottky barrier contact method for limiting current is disclosed. Said schottky contact barrier is prepared through magnetically controlled sputtering to sputter Ti/Pt/Au contact electrode and schottky contact gold, optical and chemical etching to form laser waveguide metal strips at intervals, chemical corrosion to remove GaAs layer between metal strips and expose InGaP layer, cleaning and sputtering gold.