Semi-conductor device and its producing method


Application Number: 00102992
Application Date: 2000.03.14
Publication Number: 1267916
Publication Date: 2000.09.27
Priority Information: 1999/3/15 JP 068147/1999
International: H01L29/737;H01L21/203
Applicant(s) Name: Matsushita Electric Industrial Co., Ltd.
Address:
Inventor(s) Name: Asai Akira;Onishi Teruhito;Takaki Katashi
Patent Agency Code: 11021
Patent Agent: wang huimin
Abstract This invention provides a semiconductor device and its fabrication method characterized by less transistor area, less leaky current, and more controllable fabrication. On silicon substrate 100, the collector layer 102 is formed in the area confined by the shallow channel 103. The first deposited oxide film 108 is deposited on the substrate and a collector opening 110 is created across part of the shallow trench. The Si/Si1-xGex layer grows on the area of the substrate exposed from the collector opening 110. The second deposited oxide film 112 is deposited on the substrate. The base opening 118 is formed at the center of the Si/Si1-xGex layer and the base joint opening 114 is formed at its end. Impure ions are doped into the substrate through the base junction opening 114 to form a junction leakage-proof layer 113 with conducting property similar to the external base. Therefore, the width W3 of the collector opening is greater than the width W2 of the active region to reduce the area of a transistor and restrain the junction leakage current.