Semiconductor device and forming method thereof


Application Number  00128363 Application Date  1993.06.09
Publication Number  1313640 Publication Date  2001.09.19
Priority Information   1992/6/9 JP 174883/92  
International
Classification
 H01L27/01;H01L21/70  
Applicant(s) Name  Semiconductor Energy Lab. Co., Ltd.  
Address    
Inventor(s) Name  Takemura Yasuhiko  
Patent Agency Code  72001 Patent Agent  li efei
AbstractIn a field effect type device having a thin film-like active layer, there is provided a thin film-like semiconductor device including a top side gate electrode on the active layer and a bottom side gate electrode connected to a static potential, the bottom side gate electrode being provided between the active layer and a substrate. The bottom side gate electrode may be electrically connected to only one of a source and a drain of the field effect type device. Also, the production methods therefor are disclosed.