Semiconductor device and its mfg. method

Application Number: 00109004
Application Date: 2000.06.01
Publication Number: 1278108
Publication Date: 2000.12.27
Priority Information: 1999/6/16 JP 169262/1999
International: H01L21/8239;H01L27/04;H01L27/105
Applicant(s) Name: Matsushita Electrics Corp.
Inventor(s) Name: Numa Junfumi;Nakao Keisaku;Uenomoto Yasuhiro
Patent Agency Code: 11021
Patent Agent: wang huimin
Abstract A protective insulating film is deposited on a field-effect transistor formed on a semiconductor substrate. A contact plug having a lower end portion connected to an impurity diffusion layer of the field-effect transistor is formed in the protective insulating film. A conductive diffusion preventing film connected to an upper end portion of the contact plug is formed on the protective insulating film. A capacitor lower electrode is formed on the diffusion preventing film. Sidewalls made of an oxidation resistant material are formed on at least the side surfaces of the diffusion preventing film. A capacitor insulating film made of an insulating metal oxide is formed over the capacitor lower electrode and the sidewalls. A capacitor upper electrode is formed on the capacitor insulating film.