Semiconductor device and making method thereof


Application Number: 00107751
Application Date: 2000.05.25
Publication Number: 1275802
Publication Date: 2000.12.06
Priority Information: 1999/5/26 JP 146125/1999
International: H01L21/28;H01L21/3205;H01L21/768
Applicant(s) Name: NEC Corp.
Address:
Inventor(s) Name: Hoshino Akira
Patent Agency Code: 11021
Patent Agent: zhu jingui
Abstract An insulation layer 12 is formed on a semiconductor substrate 11 and has a groove 12a for formation of a wiring layer 15 in a predetermined region. A barrier metal is formed on an inner wall of the groove 12a and prevents diffusion of atoms constituting the wiring layer 15, into the insulation layer 12. A seed layer 14 is formed on the barrier metal 13 formed at the bottom of the groove 12a and serves as a kernel of crystal growth when forming the wiring layer 15. The seed layer has crystal orientation of (1 1 1) as a dominant. The wiring layer is formed to bury the groove 12a. Moreover, the wiring layer has crystal orientation of (1 1 1) as a dominant, which suppresses electromigration.