Semiconductor device and method for manufacture of the same


Application Number: 00108946
Application Date: 2000.05.19
Publication Number: 1284747
Publication Date: 2001.02.21
Priority Information: 1999/8/14 KR 33520/99
International: H01L21/283;H01L21/314;H01L21/3205;H01L21/82;H01L27/04
Applicant(s) Name: Samsung Electronics Co., Ltd.
Address:
Inventor(s) Name: Kim Choe-Gawn;Bak Heung-Su;Bak Yong-Uk
Patent Agency Code: 11105
Patent Agent: ma ying
Abstract A semiconductor device includes a first electrode formed of a silicon-family material, a dielectric layer formed by sequentially supplying reactants on the first electrode, and a second electrode having a work function larger than that of the first electrode, with the second electrode being formed on the dielectric layer. The first electrode and the second electrode can be a lower electrode and an upper electrode, respectively, in a capacitor structure. Also, the first electrode and the second electrode can be a silicon substrate and a gate electrode, respectively, in a transistor structure. The dielectric layer can be formed by an atomic layer deposition method. Accordingly, in the semiconductor device, it is possible to improve the insulating characteristic of the dielectric layer and to increase a capacitance value in the capacitor structure.