Semiconductor device having capacitance element and formation method thereof


Application Number: 00109321
Application Date: 2000.05.26
Publication Number: 1275809
Publication Date: 2000.12.06
Priority Information: 1999/5/27 JP 148480/99
International: H01L21/70;H01L21/82;H01L27/04
Applicant(s) Name: NEC Corp.
Address:
Inventor(s) Name: Hayashi Kenji
Patent Agency Code: 11219
Patent Agent: mu dejun
Abstract A semiconductor device comprises; a semiconductor substrate having an isolation groove, and an isolation film within the isolation groove. The isolation film has within it a shallower groove. A bottom electrode of a capacitive element is buried within the shallower groove in the isolation film. An insulation film comprises a capacitive dielectric film of the capacitive element over the bottom electrode and the isolation film, and a gate insulation film over the semiconductor substrate; There is a top electrode of the capacitive element on the capacitive dielectric film and a gate electrode on the gate insulation film. The top electrode and the gate electrode have substantially the same level as each other. A surface-planarized inter-layer insulator, lies over the semiconductor substrate so that the top electrode and the gate electrode are completely buried within the surface-planarized inter-layer insulator.