Semiconductor storage device possessing redundancy function


Application Number: 00108936
Application Date: 2000.05.22
Publication Number: 1281260
Publication Date: 2001.01.24
Priority Information: 1999/7/16 JP 202844/99
International: H01L27/108
Applicant(s) Name: Mitsubishi Electric Corp.
Address:
Inventor(s) Name: Ito Taka
Patent Agency Code: 72001
Patent Agent: jiang fuhou
Abstract The invention provides a semiconductor memory device which can be surely remedied by reducing the changes of defects of a spare memory cell. This semiconductor memory device includes normal word lines 1#1-1#4, spare word lines 2#1-2#2, and bit lines 3#1-3#4. The intervals between the spare word lines are larger than that between the normal word lines. The distance between the group of normal word lines and the group of spare word lines is also set larger. Due to this structure, chances of defective contacts due to contamination can be reduced in a manufacturing stage. Moreover, storage nodes 6#1-6#4 of the spare memory cells are made larger than storage nodes 4#1-4#8 of the normal memory cells, so as to increase the capacity of the spare memory cells.