Semiconductor storage having ruthenium pole, and its mfg. method

Application Number: 00120681
Application Date: 2000.12.28
Publication Number: 1311531
Publication Date: 2001.09.05
Priority Information: 1999/12/28 KR 63639/99
International: H01L27/10;H01L27/108;H01L21/28;H01L21/8242
Applicant(s) Name: Hyundai Electronics Industries Co., Ltd.
Inventor(s) Name: Park Seung-Un
Patent Agency Code: 11105
Patent Agent: tao fengbei
Abstract A semiconductor device for use in a memory cell includes an active matrix provided with a semiconductor substrate, transistors formed on the semiconductor substrate, an insulating layer formed over the transistors and the semiconductor substrate, and a contact hole electrically connected to the transistors, a first ruthenium (Ru) layer formed over the contact hole and upon the insulating layer, and a second Ru layer with a rugged surface formed on top of the first Ru layer.