Substrate and its manufacturing method


Application Number: 00105306
Application Date: 2000.02.02
Publication Number: 1272684
Publication Date: 2000.11.08
Priority Information: 1999/2/2 JP 025481/1999
International: H01L21/08
Applicant(s) Name: Canon K. K.
Address:
Inventor(s) Name: Sakakuchi Kiyofumi;Chikae Kazuaki;Yanagita Ichitaka
Patent Agency Code: 11038
Patent Agent: wang yonggang
Abstract In a method of manufacturing a bonded substrate stack by bonding a first substrate having a porous layer to a second substrate to prepare a bonded substrate stack, and separating the bonded substrate stack into two substrates at the porous layer, defects in the separation step are prevented. A first substrate having a porous layer inside, a single-crystal Si layer on the porous layer, and an SiO2 layer on the single-crystal Si layer is bonded to a second substrate. The outer peripheral portion of the substrate is oxidized to make the outer peripheral edge of the single-crystal Si layer retreat toward the inside to prepare a bonded substrate stack in which the outer peripheral edge of the single-crystal Si layer is located inside the outer peripheral edge of the bonding region. After that, the bonded substrate stack is separated into two substrates at the porous layer.