Tag Archives: Bipolar

Method of forming silicon-germanium base zone of heterojunction bipolar transistor

Application Number  00129493 Application Date  2000.12.29 Publication Number  1304169 Publication Date  2001.07.18 Priority Information   2000/1/10 US 09/480033   International Classification  H01L21/20;H01L21/328   Applicant(s) Name  International Business Machine Corp.   Address     Inventor(s) Name  Huang Fengyi   Patent Agency Code  72001 Patent Agent  chen ji AbstractA process for forming a silicon-germanium base of a… Read More »

Integrated storage possessing bipolar transister/double capacitor type storage unit

Application Number  00128200 Application Date  2000.10.28 Publication Number  1303100 Publication Date  2001.07.11 Priority Information   1999/10/29 DE 19952311.8   International Classification  G11C11/40;H01L27/10   Applicant(s) Name  Infineon Tech. AG   Address     Inventor(s) Name  H. Herniegeschmied   Patent Agency Code  72001 Patent Agent  zhang zhicheng AbstractAn integrated memory has memory cells, each with two transistors… Read More »

New bipolar organic light sensitive body

Application Number: 00123876Application Date: 2000.08.24Publication Number: 1339721Publication Date: 2002.03.13Priority Information: International: G03G5/00Applicant(s) Name: Xianli New Technology Co., Ltd., TianjinAddress: Inventor(s) Name: Zhao Qun;Feng Wen;Li XianggaoPatent Agency Code: 12100Patent Agent: wang rongshengAbstract The bipolar organic light sensitive body consists of 3,3',5,5'-tetramethyl biphenyl diquinone, 3,3',5,5'-tetratertbutyl biphenyl diquinone, hole charge transmitting material, charge generating material and adhesive resin,… Read More »

Shape-changed hetrointerface bipolar transistor

Application Number: 00124312Application Date: 2000.09.04Publication Number: 1296291Publication Date: 2001.05.23Priority Information: 1999/10/7 US 60/158026International: H01L29/737Applicant(s) Name: Wenmao Semiconductor Co., Ltd.Address: Inventor(s) Name: Zhao Pengsheng;Wu Zhanxing;Lin YanjinPatent Agency Code: 11021Patent Agent: zhu liguangAbstract The present invention relates to a deformation heterojunction bipolarity transistor produced by using large-size gallium arsenide wafer material structure. Said material structure consists of… Read More »

Bipolar heat pump type air conditioner

Application Number: 00111393Application Date: 2000.09.21Publication Number: 1289028Publication Date: 2001.03.28Priority Information: International: F24F3/06;F25B30/02Applicant(s) Name: Cong XuriAddress: Inventor(s) Name: Cong Xuri;Yin Xiaowei;Liu HongshengPatent Agency Code: 37202Patent Agent: yu taoAbstract The heat pump type air conditioning machine is characterized by that the compressor cold-producing medium outlet is connected with coil pipe on the heat exchanger and evaporative condenser… Read More »