Tag Archives: Etching

Circulation and regeneration technology for non-fluoride type etching agent

Application Number: 00113699Application Date: 2000.09.21Publication Number: 1288075Publication Date: 2001.03.21Priority Information: International: B23K1/018;C23F1/46Applicant(s) Name: Yiguan Environmental Protection New Tech. Co., Ltd., ChangshaAddress: Inventor(s) Name: Li Deliang;Zhang YunliangPatent Agency Code: 43108Patent Agent: zhang yujiangAbstract A cyclic regeneration technology for non-fluoride detining agent of PCB includes removing Pb, Sn and Cu from used detinning liquid and adding active… Read More »

Phase-shifting filter for projecting etching imaging

Application Number: 00116190Application Date: 2000.10.20Publication Number: 1350193Publication Date: 2002.05.22Priority Information: International: G02B27/46Applicant(s) Name: Inst. of Photoelectronic Techn, Chinese Academy of SciencesAddress: Inventor(s) Name: Chen Xunan;Luo Xiangang;Yao HanminPatent Agency Code: 51200Patent Agent: zhang yigongAbstract The present invention relates to a projection photo-etching image phase-shifting filter equipment, consisting of light source, condenser group, imaging objective and silicon… Read More »

Technology for generating vein on Al alloy surface by direct chemical etching

Application Number: 00117311Application Date: 2000.08.07Publication Number: 1279302Publication Date: 2001.01.10Priority Information: International: C23F1/00Applicant(s) Name: Yang DingAddress: Inventor(s) Name: Yang DingPatent Agency Code: 44101Patent Agent: zhang gaoxiangAbstract A process for generating sandy or flossy vein on the surface of Al-alloy by directly chemical etching includes such steps as conventional chemical removing oil, washing with water, polishing, acidic… Read More »

Method for protecting sacrificial layer of movable structure in deep-reaction ion etching process

Application Number: 00119595Application Date: 2000.08.11Publication Number: 1281061Publication Date: 2001.01.24Priority Information: International: B81B5/00;C23F1/02Applicant(s) Name: Shanghai Inst of Metallurgy, Chinese Academy of SciencesAddress: Inventor(s) Name: Wang Dongping;Wang Wenhui;Li TiePatent Agency Code: 31002Patent Agent: fei kaikuiAbstract A method for protecting movable structure in deep-reaction ionic etching technique with sacrificial layer is discolsed. As the movable structure is greatly… Read More »

Method for protecting additional structure of movable component in deep reaction ion etching process

Application Number: 00119596Application Date: 2000.08.11Publication Number: 1282100Publication Date: 2001.01.31Priority Information: International: H01L21/3065Applicant(s) Name: Shanghai Inst. of Metallurgy, Chinese Academy of SciencesAddress: Inventor(s) Name: Li Tie;Xiong Bin;Wang DongpingPatent Agency Code: 31002Patent Agent: fei kaikuiAbstract The method for protecting additional structure of movable component in the course of deep-reaction ion-etching process is characterized by that when the… Read More »

Wiring and its making method including the described wired semiconductor device and dry etching process

Application Number: 00121738Application Date: 2000.07.24Publication Number: 1282107Publication Date: 2001.01.31Priority Information: 1999/7/22 JP 206954/99International: H01L21/306;H01L29/786Applicant(s) Name: Semiconductor Energy Laboratory Co., Ltd.Address: Inventor(s) Name: Suzawa Hideomi;Onu KoyiPatent Agency Code: 72001Patent Agent: liang yongAbstract A dry etching method for forming tungsten wiring having a tapered shape and having a large specific selectivity with respect to a base film… Read More »

Method of eliminating nickel and heavy metal ion from waste ferric chloride liquid after etching or pickling

Application Number: 00125628Application Date: 2000.10.10Publication Number: 1348020Publication Date: 2002.05.08Priority Information: International: C23F1/46Applicant(s) Name: Tongji Univ.Address: Inventor(s) Name: Li Fengting;Liu Suiqing;Zhang BingruPatent Agency Code: 31202Patent Agent: tan shenweiAbstract Weaste ferric chloride liquid after etching or pickling and containing 50 PPM to 2 wt% nickel is made to mix with reducing ion powder at 40-95 deg.c and… Read More »

Auto-alignment etching method of producing micro structure and infrared detector produced by the method

Application Number: 00125862Application Date: 2000.10.26Publication Number: 1299964Publication Date: 2001.06.20Priority Information: International: G01J1/00;G01J1/42;G08B17/12;H01L31/00Applicant(s) Name: Shanghai Inst. of Metallurgy, Chinese Academy of SciencesAddress: Inventor(s) Name: Xu Zhengyi;Xiong Bin;Wang YuelinPatent Agency Code: 31002Patent Agent: pan zhenAbstract The present invention relates to a method for making microstructure by using self-aligning etching process and its made micromachinery thermopile infrared detector,… Read More »

Etching insulating layer and mfg. semiconductor device process

Application Number: 00127000Application Date: 2000.09.11Publication Number: 1288253Publication Date: 2001.03.21Priority Information: 1999/9/13 US 09/394,517International: C23F1/10;H01L21/311Applicant(s) Name: Motorola, Inc.Address: Inventor(s) Name: Genithy LagagplanPatent Agency Code: 11038Patent Agent: wang yonggangAbstract Many variations of etches for insulating layers (114, 400, 422, 426) can be used. In one set of embodiments, an insulating layer is etched using an oxide etching… Read More »

Dry etching method

Application Number: 00106884Application Date: 2000.03.10Publication Number: 1267905Publication Date: 2000.09.27Priority Information: 1999/3/11 JP 065046/1999; 1999/3/15 JP 068052/1999International: C23F1/12;C23F4/00;H01L21/3065Applicant(s) Name: Toshiba K. K.Address: Inventor(s) Name: Sugiura Hiroo;Narita MasakiPatent Agency Code: 11038Patent Agent: gui yongliangAbstract This invention discloses a dry etching method that is used for the pattern of the laminated film comprising at least one thin film,… Read More »

Etching and cleaning method and using equipment for etching and cleaning

Application Number: 00102991Application Date: 2000.03.14Publication Number: 1267904Publication Date: 2000.09.27Priority Information: 1999/3/15 JP 068898/1999International: B08B3/02;C23F1/08;H01L21/304Applicant(s) Name: NEC Corp.Address: Inventor(s) Name: Yamazaki Shinya;Aoki HidemitsuruPatent Agency Code: 11021Patent Agent: rong zhiminAbstract An etching/cleaning apparatus is provided, which makes it possible to effectively remove an unnecessary material or materials existing on a semiconductor wafer without damaging the device area… Read More »