Tag Archives: implantation

Method for generating contact between bit lines and performing ion implantation

Application Number: 00117612Application Date: 2000.05.24Publication Number: 1290035Publication Date: 2001.04.04Priority Information: International: H01L21/265;H01L21/28;H01L21/324;H01L21/768Applicant(s) Name: Lianhua Electronic Co LtdAddress: Inventor(s) Name: Xie YongfenPatent Agency Code: 11105Patent Agent: tao fengbeiAbstract A method for ion implantation on semiconductor substrate includes such steps as forming the first surface layer on partial surface of substrate, and implanting ions into substrate through… Read More »

Ion implantation surface modification method of high abrasion performance engineering plastics

Application Number: 00107765Application Date: 2000.05.26Publication Number: 1272510Publication Date: 2000.11.08Priority Information: International: C08J7/12Applicant(s) Name: Qinhua Univ.Address: Inventor(s) Name: San Jinfu;Zhu Baoliang;Liu JiajunPatent Agency Code: 11201Patent Agent: luo wenqunAbstract An ion implementation surface-modifying method for high-abrasive engineering plastics is characteried by placing the engineering plastic material to be treated in ion implantation equipment to make ion implementation.… Read More »

Internal surface ion implantation apparatus

Application Number: 00106153Application Date: 2000.04.27Publication Number: 1320948Publication Date: 2001.11.07Priority Information: International: H01J37/317;H01L21/265Applicant(s) Name: Hong Kong City UnivAddress: Inventor(s) Name: Zhu Jianhao;Liu Aiguo;Zeng XuchuPatent Agency Code: 72003Patent Agent: li qiangAbstract An internal surface ion implantation apparatus is composed of a vacuum chamber, a plasma generator, a cylindrical body and a target table in the vacuum chamber,… Read More »

DC plasma ion implantation apparatus with grounded conducting net

Application Number: 00106152Application Date: 2000.04.27Publication Number: 1320947Publication Date: 2001.11.07Priority Information: International: H01J37/317;H01L21/265Applicant(s) Name: Hong Kong City UnivAddress: Inventor(s) Name: Zhu Jianhao;Guo Daqin;Zeng XuchuPatent Agency Code: 72003Patent Agent: li qiangAbstract A DC plasma ion implantation apparatus is composed of a vacuum chamber, a plasma generator, a target table in the vacuum chamber and a high-voltage power… Read More »