Tag Archives: MOS

Processaable isolation layer grid inlay technology used in sub 0.05 micrometer MOS device

Application Number  00129485 Application Date  2000.12.29 Publication Number  1319884 Publication Date  2001.10.31 Priority Information   2000/1/21 US 09/488806   International Classification  H01L21/336   Applicant(s) Name  International Business Machine Corp.   Address     Inventor(s) Name  D.C. Bode;H.I. Hanafei;W.C. Nazils   Patent Agency Code  72001 Patent Agent  chen ji AbstractTechniques to fabricate sub-0.05 mum MOSFET devices… Read More »

Video imaging sensor of quadrant mode complementary MOS

Application Number: 00108239Application Date: 2000.04.30Publication Number: 1275811Publication Date: 2000.12.06Priority Information: 1999/5/3 US 09/303991International: H01L27/00;H01L27/146;H04N7/18Applicant(s) Name: Full Viewing Tech.Corp.Address: Inventor(s) Name: K. Dong;X. He;H. YangPatent Agency Code: 72001Patent Agent: wang yueAbstract A CMOS camera image sensor that may be combined with additional CMOS camera image sensors to form a multiple-camera security monitoring system. Each CMOS image… Read More »