Tag Archives: nitride

Growth process for monocrystal of gadolinium nitride, substrates of gadolinium mitride monocrystal and manufacture thereof

Application Number  00129013 Application Date  2000.09.26 Publication Number  1289865 Publication Date  2001.04.04 Priority Information   1999/9/28 JP 273882/99   International Classification  C30B25/02;C30B29/40;C30B29/38;H01L21/20;H01L33/00   Applicant(s) Name  Sumitomo Electric Industries, Ltd.   Address     Inventor(s) Name  Motoki Kensaku;Okahisa Takuji;Matsumoto Naoki   Patent Agency Code  11105 Patent Agent  fan menge AbstractA GaN single crystal is grown by… Read More »

Treating method and equipment for waste gas containing nitride

Application Number: 00126850Application Date: 2000.09.06Publication Number: 1290570Publication Date: 2001.04.11Priority Information: 1999/9/6 JP 252028/1999; 2000/1/12 JP 3203/2000International: B01D53/54;B01D53/78;B01D53/96;C02F3/00Applicant(s) Name: Ebara Corp.Address: Inventor(s) Name: Yamashita Shigeki;Kitakawa MasaharuPatent Agency Code: 11038Patent Agent: huang zexiongAbstract A method and an apparatus for biologically treating a nitrogen oxide-containing waste gas without requiring a large amount of water by treating ammonia-containing circulated… Read More »

Process for preparation of self-spread high-temp. synthesizing ferro-silicon nitride powder

Application Number: 00116803Application Date: 2000.06.27Publication Number: 1275526Publication Date: 2000.12.06Priority Information: International: C01B21/06;C04B35/584Applicant(s) Name: Shanghai Inst. Of Silicate, Chinese Aademy of SciencesAddress: Inventor(s) Name: Wang Guojian;Zhuang Hanrui;Li WenlanPatent Agency Code: 31002Patent Agent: pan zhensuAbstract A preparation method of self-spreading high-temp. synthetic silicon-iron nitride powder belongs to the field of non-oxide superfine powder preparation, and is characterized… Read More »

Growth method of III-IV nitride semiconductors and gas phase growth apparatus

Application Number: 00120164Application Date: 2000.06.30Publication Number: 1279504Publication Date: 2001.01.10Priority Information: 1999/6/30 JP 186012/99International: H01L21/205Applicant(s) Name: Sumitomo Electric Industries Ltd.Address: Inventor(s) Name: Kota Shigemi;Tatsumi MasamiPatent Agency Code: 11105Patent Agent: fan mengeAbstract A vapor phase growth apparatus 1 for growing a group III-V nitride semiconductor (GaN) comprises a reaction ampoule 3 having a container 11 disposed therein… Read More »

Reaction synthesis process for aluminium nitride powder body

Application Number: 00120742Application Date: 2000.07.13Publication Number: 1275527Publication Date: 2000.12.06Priority Information: International: C01B21/072;C04B35/581Applicant(s) Name: Beijing Polytechnic Univ.Address: Inventor(s) Name: Wang Qun;Lin Zhiliang;Zhou MeilingPatent Agency Code: 11203Patent Agent: zhang huiAbstract A synthesis method of aluminium nitride powder is characterized by that it adopts Al alloy system as raw material, and its synthesis process includes the following steps:… Read More »

Electric arc ion-plating deposition technology of titanium niobium nitride hard film

Application Number: 00108514Application Date: 2000.04.28Publication Number: 1321791Publication Date: 2001.11.14Priority Information: International: C23C14/06;C23C14/32Applicant(s) Name: Dalian Univ. of Science & EngineeringAddress: Inventor(s) Name: Lin GuoqiangPatent Agency Code: 21200Patent Agent: hou mengyuanAbstract The present invention belongs to the field of metallic material surface modification technology. Said invention technique utilizes the control of arc current of cathode target for… Read More »

Electric arc ion-plating deposition technology of titanium niobium nitride superhard gradient film

Application Number: 00108513Application Date: 2000.04.28Publication Number: 1321790Publication Date: 2001.11.14Priority Information: International: C23C14/06;C23C14/32Applicant(s) Name: Dalian Univ. of Science & EngineeringAddress: Inventor(s) Name: Lin GuoqiangPatent Agency Code: 21200Patent Agent: hou mengyuanAbstract The present invention belongs to the field of metallic material surface modification technology. Said invention is characterized by that it utilizes the regulation of continuous change… Read More »

Nitride III semiconductor device and its producing method

Application Number: 00107888Application Date: 2000.06.29Publication Number: 1290958Publication Date: 2001.04.11Priority Information: 1999/6/30 JP 222882/1999; 1999/11/5 JP 315193/1999International: H01L21/205;H01L21/86;H01L33/00;H01S5/30Applicant(s) Name: Toyoda Gosei Co., Ltd.Address: Inventor(s) Name: Sendai Toshiaki;Shibata Naoki;Senda MasanobuPatent Agency Code: 11021Patent Agent: liu xiaofengAbstract A group III nitride compound semiconductor device has a substrate and an AlN single crystal layer formed on the substrate. The… Read More »

Corrosion technique of anisotropic nitride by inlay corrosion method

Application Number: 00106557Application Date: 2000.04.12Publication Number: 1271871Publication Date: 2000.11.01Priority Information: 1999/4/26 US 09/299,137International: G03F7/004;H01L21/311;H01L21/336;H01L21/762;H01L21/823Applicant(s) Name: IBM Corp.Address: Inventor(s) Name: D. C. Boyd;S. M. Boerns;H. I. HannafyPatent Agency Code: 11038Patent Agent: wang yonggangAbstract A process and etchant gas composition for anisotropically etching a trench in a silicon nitride layer of a multilayer structure and an etchant… Read More »

Production method of gallium nitride compound semiconductor

Application Number: 00106264Application Date: 2000.04.29Publication Number: 1322017Publication Date: 2001.11.14Priority Information: International: H01L33/00;H05B33/00Applicant(s) Name: Huashang Photoelectric Co. Ltd.Address: Inventor(s) Name: Song Yingche;Liu WenmingPatent Agency Code: 72003Patent Agent: li qiangAbstract The production method of gallium nitride compound semiconductor is characterized by that it adopts diffusion process to make beryllium ion diffuse into hole layer of gallium nitride,… Read More »

Growth method of gallium nitride series compound semiconductor with amorphous and polycrystalline structure

Application Number: 00106194Application Date: 2000.04.30Publication Number: 1322006Publication Date: 2001.11.14Priority Information: International: H01L21/20;H01L33/00Applicant(s) Name: Zhao RujieAddress: Inventor(s) Name: Zhao RujiePatent Agency Code: 11127Patent Agent: liu chaohuaAbstract The growing method of gallium nitride series compound semiconductor with amorphous and polycrystal structure includes the following steps: vapor-phase growing first amophous and/or polycrystal compound semiconductor layer, its structure components… Read More »

Cubic boron nitride powder suitable for producing cutter and production method therefor

Application Number: 00105817Application Date: 2000.04.06Publication Number: 1269272Publication Date: 2000.10.11Priority Information: 1999/4/7 SE 9901221-3International: B22F7/08;C22C29/16Applicant(s) Name: Sandvik ABAddress: Inventor(s) Name: Ulf Roland;Grord VeinlerPatent Agency Code: 72002Patent Agent: guo xiaodongAbstract The present invention relates to a method of making a PCBN cutting tool insert. The method includes the following steps: mixing raw material powders containing cBN and… Read More »

Nitride semiconductor device

Application Number: 00105756Application Date: 2000.04.05Publication Number: 1316782Publication Date: 2001.10.10Priority Information: International: H01L33/00;H01S5/00Applicant(s) Name: Semiconductor Inst, Chinese Academy of SciencesAddress: Inventor(s) Name: Lu Dacheng;liu Xianglin;Yuan HairongPatent Agency Code: 11021Patent Agent: tang baobengAbstract A semiconductor device of nitride is composed of nitride buffer layer on an insulating substrate, the multiple heterogeneous nitride semiconductor layer for increasing the… Read More »

Materials based on porous cubic crystal series boron nitride for post production of cutting tools and preparation method thereof

Application Number: 00105718Application Date: 2000.04.03Publication Number: 1269273Publication Date: 2000.10.11Priority Information: 1999/4/7 SE 9901222-1International: B22F3/11;B22F7/06;C22C29/14Applicant(s) Name: Sandvik ABAddress: Inventor(s) Name: Ulf Roland;Jeorord VeinPatent Agency Code: 72002Patent Agent: gan lingAbstract The presently claimed invention relates to a method of making a PcBN cutting tool insert. The method includes the following steps: mixing raw material powders, (e.g., cBN,… Read More »

Isolating axial ring of nitride lining for improvement of dynamic random memory process

Application Number: 00105381Application Date: 2000.03.31Publication Number: 1279509Publication Date: 2001.01.10Priority Information: 1999/3/31 US 09/282122International: H01L21/70;H01L21/8242Applicant(s) Name: Invenio Technology North America Corp.Address: Inventor(s) Name: C. Gleiman;C. A. Mazurey;C. Dietheodov;eta l.Patent Agency Code: 72001Patent Agent: liang yongAbstract Disclosed is a method of fabricating a trench cell capacitor which can be used in the formation of a DRAM cell.… Read More »

Catalyst using TiO2 as carrier to load metal nitride Mo2N

Application Number: 00103352Application Date: 2000.03.02Publication Number: 1262969Publication Date: 2000.08.16Priority Information: International: B01J27/24;B01J37/02;C10G45/04Applicant(s) Name: Nankai Univ.Address: Inventor(s) Name: Li Wei;Tao Keyi;Wang YuhongPatent Agency Code: 12200Patent Agent: zhao zunshengAbstract The present invention relates to a catalyst formed from TiO2 as carrier and loaded with effective quantity of nitride Mo2N. It is made up by using TiO2 and… Read More »