Tag Archives: OXIDE

Process for preparing nm powder of zinc oxide

Application Number  00129459 Application Date  2000.12.29 Publication Number  1296916 Publication Date  2001.05.30 Priority Information     International Classification  C01G9/02   Applicant(s) Name  Shandong Univ.   Address     Inventor(s) Name  Chen Dairong;Jiao Xiuling;Cheng Gang   Patent Agency Code  37200 Patent Agent  liu xudong AbstractA process for preparing nm-class zinc oxide powder from zinc salt solution… Read More »

Copper aluminium-cerium aluminium compound oxide combustion catalyst, its preparation and use

Application Number  00129260 Application Date  2000.09.29 Publication Number  1345629 Publication Date  2002.04.24 Priority Information     International Classification  B01J23/835;C10G11/18;C10K3/00   Applicant(s) Name  Beijing Univ.   Address     Inventor(s) Name  Lin Bingxiong;Zhang Wenjing;Liu Yingjun   Patent Agency Code  11038 Patent Agent  ren zonghua AbstractThe present invention relates to a non-nobile metal carbon monoxide combustion catalyst… Read More »

Colourful signal illuminating appliance containing light coated with iron oxide pigment

Application Number  00129232 Application Date  2000.08.29 Publication Number  1287379 Publication Date  2001.03.14 Priority Information   1999/9/1 DE 19941531.5   International Classification  F21S8/10;H01K1/32   Applicant(s) Name  Koninklijke Philips Electronics N.V.   Address     Inventor(s) Name  T. Anreen;K. Dnisen;B. Gorrithur   Patent Agency Code  72001 Patent Agent  wang jihao AbstractColored luminaire, in particular a signal luminaire… Read More »

Oxide magnetic material and chip

Application Number  00128867 Application Date  2000.08.18 Publication Number  1291777 Publication Date  2001.04.18 Priority Information   1999/8/19 JP 232412/99; 1999/9/17 JP 262934/99; 1999/9/17 JP 262935/99   International Classification  H01F1/10;H01F1/34;H01F5/00;H01F17/00;C01G49/00   Applicant(s) Name  TDK Corp.   Address     Inventor(s) Name  Ito Kei;Takahashi Sachio;Onu Takuya   Patent Agency Code  72001 Patent Agent  lu xinhua AbstractAn oxide magnetic… Read More »

Lithium coated mixed oxide paticles and use thereof

Application Number  00128772 Application Date  2000.09.21 Publication Number  1290047 Publication Date  2001.04.04 Priority Information   1999/9/25 DE 19946066.3   International Classification  C01D15/00;H01M4/36   Applicant(s) Name  Merck Patent GmbH   Address     Inventor(s) Name  R. Eryestan;U. Heide;N. Lodes   Patent Agency Code  11038 Patent Agent  chen jizhuang AbstractThe invention relates to polymer-coated lithium mixed oxide… Read More »

Rubber mixture contg. hydroxy and/or carboxy rubber and hydrophobic silicon oxide or silicates filler

Application Number  00128453 Application Date  2000.11.22 Publication Number  1296991 Publication Date  2001.05.30 Priority Information   1999/11/22 DE 19956097.8   International Classification  B60C1/00;C08K3/34;C08L21/00   Applicant(s) Name  Bayer AG   Address     Inventor(s) Name  T. Schorr;R. Peter;R. Steiger   Patent Agency Code  72001 Patent Agent  pang lizhi AbstractThe rubber mixtures according to the invention comprising a… Read More »

Process and equipment for preparing nm zinc oxide

Application Number: 00113078Application Date: 2000.06.27Publication Number: 1331049Publication Date: 2002.01.16Priority Information: International: C01G9/02;C01G9/00;B01J19/26Applicant(s) Name: Zhang DefuAddress: Inventor(s) Name: Zhang DefuPatent Agency Code: 51123Patent Agent: kang haiyanAbstract A process and equipment for preparing nm-class zinc oxide is disclosed. The said process includes synthesizing the precursor by wet chemical method and multi-stage spraying while controlling the temp, concentration… Read More »

Semiconductor structure having crystalline alkaline earth metal oxide interface with silicon

Application Number: 00120218Application Date: 2000.07.13Publication Number: 1334595Publication Date: 2002.02.06Priority Information: International: H01L21/00;H01L21/20;H01L29/04;H01L29/12Applicant(s) Name: Motorola Inc.Address: Inventor(s) Name: Wang Jun;W.J. Ums;J.A. HolmarkPatent Agency Code: 11038Patent Agent: fu jianjunAbstract A structure of semiconductor incldues silicon substrate, a layer or multi layers of monocrystal oxide. An boundary surface between the silicon substrate and the layer or multi layers… Read More »

Production method of high-brightness LED chip using zinc oxide as its window layer

Application Number: 00111112Application Date: 2000.05.19Publication Number: 1271966Publication Date: 2000.11.01Priority Information: International: H01L33/00;H01S5/32Applicant(s) Name: Shandong Univ.Address: Inventor(s) Name: Huang Baibiao;Zhang Zhaochun;Yu YongqinPatent Agency Code: 37200Patent Agent: liu xudongAbstract When a metallic organic compound vapour phase deposition (MOCVD) method is used for epitaxial growth of diode material, the MOCVD epitaxy growth technology in continuously used after the… Read More »

Method and catalyst for preparing oxide containing two carbon atoms from synthetic gas

Application Number: 00122220Application Date: 2000.06.24Publication Number: 1280116Publication Date: 2001.01.17Priority Information: 1999/6/25 DE 19929281.7International: C07B41/00;C07C27/04Applicant(s) Name: BASF AGAddress: Inventor(s) Name: H.Lou;H.ZhouPatent Agency Code: 72001Patent Agent: lu xinhuaAbstract In a process for preparing C2-oxygenates by reaction of CO and H2 over a rhodium-containing supported catalyst, the catalyst comprises, based on the total weight, from 0.01 to 1O%… Read More »

Continuous production process of zinc oxide whiskers and its equipment

Application Number: 00113406Application Date: 2000.04.30Publication Number: 1321798Publication Date: 2001.11.14Priority Information: International: C30B29/18;C30B29/62Applicant(s) Name: Changsha Academy of Mining & Metallurgy, Ministry of Metallurgical IndustryAddress: Inventor(s) Name: Xiao Songwen;Ma Rongjun;Xiao XiaoPatent Agency Code: 43008Patent Agent: chen kaiyaoAbstract The continuous production process of zinc oxide whisker is characterized by that said invented method utilizes mechano-chemical forced pretreatment to… Read More »

Method of making semiconductor structure containing metal oxide interface of silicone

Application Number: 00120254Application Date: 2000.07.14Publication Number: 1281245Publication Date: 2001.01.24Priority Information: 1999/7/15 US 09/354,522International: C30B25/00;H01L21/00;H01L21/20Applicant(s) Name: MotorolaAddress: Inventor(s) Name: J. Landany;L. Drupard;Yu ZhiyiPatent Agency Code: 11038Patent Agent: du rixinAbstract A method for fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface (12); forming amorphous silicon dioxide (14) on the… Read More »

Preparation of nanometer metal oxide material

Application Number: 00111310Application Date: 2000.08.25Publication Number: 1288861Publication Date: 2001.03.28Priority Information: International: C01G1/02Applicant(s) Name: Shandong Prov. Inst. of Marine Chemical ScienceAddress: Inventor(s) Name: Gao Shanmin;Sun ShushengPatent Agency Code: 37100Patent Agent: li zhenqiAbstract The method for preparing metal oxide nanometer material is characterized by that mixing and grinding metal salt and alkali metal hydroxide in ball-grinding mill… Read More »

Method for appts for mfg oxide Nm srystal

Application Number: 00122487Application Date: 2000.08.04Publication Number: 1283591Publication Date: 2001.02.14Priority Information: 1999/8/5 DE 19936868.6International: C01F17/00;C01F11/02;C01F7/02;C01F5/02;C01G11/00;C09K11/08Applicant(s) Name: Patent-Treuhand-Gesellschaft Fur Elektrische GmbHAddress: Inventor(s) Name: T. Friss;A. Gaen;A. KanraldPatent Agency Code: 72001Patent Agent: cheng tianzhengAbstract The present invention relates to a process and a method for producing oxidic nanocrystals, the process comprising the following steps: Introducing host lattice ions… Read More »

Wet chemical synthesizing method for lithium-manganese oxide

Application Number: 00113534Application Date: 2000.07.11Publication Number: 1333179Publication Date: 2002.01.30Priority Information: International: C01B13/32;C01G45/02Applicant(s) Name: Zhongnan Univ.Address: Inventor(s) Name: Li Yunjiao;Li Honggui;Sun PeimeiPatent Agency Code: 43200Patent Agent: gong canfanAbstract The wet chemical synthesis method of lithium-manganese oxide belongs to the field of inorganic non-metallic material and wet clemistry, and is characterized by that the manganese hydroxide is… Read More »

Method for mfg. semioconductor structure having crystalline alkaline earth metal oxide interface with silicon

Application Number: 00120260Application Date: 2000.07.14Publication Number: 1334593Publication Date: 2002.02.06Priority Information: International: C30B25/00;H01L21/00;H01L21/20Applicant(s) Name: Motorola Inc.Address: Inventor(s) Name: Yu Zhiyi;L. Drupade;K.D. OwenjaldPatent Agency Code: 11038Patent Agent: fu jianjunAbstract A method to fabricate the structure of semiconductor includes following steps: (1) providing a surface with silicon substrate, (2) forming a boundary surface in characters as single atom… Read More »

Annealing equipment for high-temp oxide crystal

Application Number: 00111883Application Date: 2000.03.03Publication Number: 1264759Publication Date: 2000.08.30Priority Information: International: C30B33/02Applicant(s) Name: Shanghai Inst. of Optical Fine Machinery, Chinese Academy of SciencesAddress: Inventor(s) Name: Xu Jun;Zhou Guoqing;Deng PeizhenPatent Agency Code: 31002Patent Agent: li lanyangAbstract A high-temp annealing equipment for oxide crystal is composed of sealing bell, crucible bearer, pad, constant-temp cylinder and heater. The… Read More »

Oxide catalyst

Application Number: 00122546Application Date: 2000.08.07Publication Number: 1283520Publication Date: 2001.02.14Priority Information: 1999/8/6 DE 19937105.9International: B01J23/04;B01J23/42;B01J23/62;C07C5/333;C07C5/48Applicant(s) Name: BASF AktiengesellschaftAddress: Inventor(s) Name: D. Heinick;K. Hass;U. StabellPatent Agency Code: 72001Patent Agent: wang jingchaoAbstract New catalysts (I) contain: (a) 10-99.9 wt.% of zirconium dioxide and/or titanium dioxide; (b) 0.1-30 wt.% of silicon dioxide; (c) 0-60 wt.% of aluminum oxide; and… Read More »

Process of producing high-purity magnetic iron oxide with ferous sulfate as by-product of titanium white production

Application Number: 00113589Application Date: 2000.08.02Publication Number: 1336327Publication Date: 2002.02.20Priority Information: International: C01G49/06Applicant(s) Name: Hunan Zhuzhou Chemical Group Co., Ltd.Address: Inventor(s) Name: Li Shinong;Chen Qiming;Chen ChuxinPatent Agency Code: 43105Patent Agent: yan linzhiAbstract A method of producing high purity magnetic iron oxide using titanium white by product ferrous sulfate is characterized in that; the ferrous sulfate is… Read More »

Compound oxide catalyst and method for preparing (methyl) propenal and (methgl) acrylic acid

Application Number: 00120312Application Date: 2000.05.25Publication Number: 1282630Publication Date: 2001.02.07Priority Information: 1999/5/25 JP 144296/99International: B01J23/88;B01J23/881;B01J23/882;B01J23/883;B01J23/888;C07C45/35Applicant(s) Name: Nippon Shokubai Co., Ltd.Address: Inventor(s) Name: Kimura Masanao;Tanimoto Michio;Onodera HideoPatent Agency Code: 72001Patent Agent: lu xinhuaAbstract Complex oxide catalysts represented by the formula, MoaWbBicFedAeBfCgDhEiOx (in which A is Ni or Co; B is Na, K, Rb, Cs or Tl; C… Read More »

Composite nanometer-level Ce-V-Ti oxide and its preparation and application

Application Number: 00112099Application Date: 2000.02.28Publication Number: 1265383Publication Date: 2000.09.06Priority Information: International: C04B35/46;C04B35/624Applicant(s) Name: Nanjing Univ.Address: Inventor(s) Name: Fan Yining;Liu Liu;Cai RuiPatent Agency Code: 32204Patent Agent: huang jiadongAbstract The composite nanometer-level oxide is composed of CeO2-V2O5-TiO2, in which the atom ratio between Ce and V is 1 to 1-8, the atom ratio between V and Ti… Read More »

Technological process for producing chromium-zirconium-copper rod material containing oxide dispersed and reinforced copper

Application Number: 00122913Application Date: 2000.08.23Publication Number: 1339613Publication Date: 2002.03.13Priority Information: International: B23K11/00;B23K35/30;C22C1/05;C22C1/10;C22C9/00Applicant(s) Name: Inst. of Metals, Chinese Academy of SciencesAddress: Inventor(s) Name: Min Jiayuan;He Guanhu;Wang BaoquanPatent Agency Code: 21002Patent Agent: zhu guanglinAbstract The present invention relates to one production process of resistive spot welding electrode. Fine copper powder and superfine aluminium oxide powder are mixed… Read More »

Polysaccharide and inorganic oxide hybridized material as electric vheological liquid and its preparing method

Application Number: 00113763Application Date: 2000.03.21Publication Number: 1314457Publication Date: 2001.09.26Priority Information: International: C10M103/06;C10M107/36Applicant(s) Name: Northwest-China Polytechnic Univ.Address: Inventor(s) Name: Zhao Xiaopeng;Duan Xu;Yin JianboPatent Agency Code: 00000Patent Agent: Abstract Unlike traditional core-shell type or copolymerization type composite organic/inorganic granular material, the disperse phase of electric rheological liquid is hybridized material in molecular size of modified starch and… Read More »

Silicon complementary metal oxide semiconductor body contact on insulator formed by grating

Application Number: 00120329Application Date: 2000.07.12Publication Number: 1280388Publication Date: 2001.01.17Priority Information: 1999/7/13 US 09/351,647International: H01L21/786;H01L21/84Applicant(s) Name: IBM Co.Address: Inventor(s) Name: Michael J. Hagruf;Jack A. MangrimanPatent Agency Code: 11038Patent Agent: wang yonggangAbstract A structure and process for making a semiconductor device with SOI body contacts under the gate conductor. The gate conductor is partitioned into segments and… Read More »

Composite ceramic material for middle-temperature oxide fuel cell

Application Number: 00112228Application Date: 2000.04.21Publication Number: 1269613Publication Date: 2000.10.11Priority Information: 2000/2/16 CN 00112085.9International: C04B35/01;H01B3/12;H01M8/02;H01M8/10Applicant(s) Name: Liu XiangrongAddress: Inventor(s) Name: Zhu Bin;Liu XiangrongPatent Agency Code: 34101Patent Agent: jin huizhenAbstract The solid fuel cell electrolyte is characterized by using cerium dioxide or ion-doped cerium dioxide and inorganic salt and mixing them to form two-phase or multi-phase composite… Read More »

Composite oxide catalyst for eliminating SO2 and NOx in gas mixture simultaneously

Application Number: 00123794Application Date: 2000.09.07Publication Number: 1288773Publication Date: 2001.03.28Priority Information: International: B01D53/60;B01D53/86Applicant(s) Name: Beijing Univ.Address: Inventor(s) Name: Yang Xiyao;Zhang Zhaoliang;Ma JunPatent Agency Code: 11200Patent Agent: zhou zhengAbstract The present invention relates to a catalyst capable of eliminating sulfur dioxide and nitrogen oxide from mixed gas simultaneously. It is a compound oxide formed from titanium dioxide… Read More »

Modified nm zinc oxide UV ray shielding and absorbing material

Application Number: 00114050Application Date: 2000.01.28Publication Number: 1260366Publication Date: 2000.07.19Priority Information: International: C09C1/04;C09C3/08Applicant(s) Name: Guangzhou Chemistry Inst., China Academy of SciencesAddress: Inventor(s) Name: Liu Xuening;Yang ZhizhongPatent Agency Code: 44001Patent Agent: li jilanAbstract The present invention adopts ultrasonic micro emulsion method to coat the surface of nanometer zinc oxide or magnesia-doped nanometer zinc oxide with non-ionic surfactant,a… Read More »

External compensation method of atropisomerism bis (phosphine oxide) compound

Application Number: 00120417Application Date: 2000.07.07Publication Number: 1281860Publication Date: 2001.01.31Priority Information: 1999/7/9 EP 99113306.7International: C07F9/53;C07F13/00Applicant(s) Name: F. Hoffmann-La Roche & Co. AGAddress: Inventor(s) Name: F. Chitzler;M. Ralohde;R. SchmiedPatent Agency Code: 11038Patent Agent: du jingyangAbstract The present invention is concerned with a novel process for the racemization of atropisomeric bisphosphine oxide compounds of formula I in their… Read More »

Process for preparing high-purity active zinc oxide by immersing in ammonia water and ammonium carbonate solution and complexing

Application Number: 00112249Application Date: 2000.04.30Publication Number: 1270144Publication Date: 2000.10.18Priority Information: International: C01G9/02Applicant(s) Name: Yang GuohuaAddress: Inventor(s) Name: Yang GuohuaPatent Agency Code: 32214Patent Agent: xia haichuAbstract A process for preparing high-purity active zinc oxide includes such steps as complex immersing of low-grade zinc oxide as raw material in mixture of ammonia water and ammonium dicarbonate, three-step… Read More »

Method for growing silicon oxide thick film by adopting TEOS source PECVD

Application Number: 00124309Application Date: 2000.09.04Publication Number: 1341957Publication Date: 2002.03.27Priority Information: International: H01L21/316;H01L21/324Applicant(s) Name: Inst. of Semiconductor, Chinese Academy of SciencesAddress: Inventor(s) Name: Lei Hongbing;Wang Hongjie;Hu XiongweiPatent Agency Code: 11021Patent Agent: rong zhiminAbstract The invention relates to a method to grow silicon oxide thick film by using TEOS source PECVD. The surface of silicon wafer is… Read More »