Tag Archives: OXIDE

New method for preparing hydrogen cyanide from nitrogen oxide and methane

Application Number: 00120100Application Date: 2000.07.06Publication Number: 1280098Publication Date: 2001.01.17Priority Information: 1999/7/12 US 60/143,342International: B01J37/02;C01C3/02Applicant(s) Name: Rohu and Haas Co.Address: Inventor(s) Name: A.Bendely;M.S.DicolschPatent Agency Code: 11038Patent Agent: du jingyangAbstract This invention relates to a process for preparing hydrogen cyanide from nitric oxide, a hydrocarbon gas, and optionally ammonia. The process reduces the amount of residual ammonia… Read More »

Preparation of high-purity superfine electron-level ferric oxide powder

Application Number: 00111081Application Date: 2000.04.25Publication Number: 1267640Publication Date: 2000.09.27Priority Information: International: C01G49/06;C01G49/10Applicant(s) Name: Shandong Univ.Address: Inventor(s) Name: Chen Dairong;Jiao Xiuling;Yu MingqinPatent Agency Code: 37200Patent Agent: liu xudongAbstract The present invention relats to the preparation of inorganic non-metal material. High-purity superfine electron-level alpha-Fe2O3 powder of 0.03-0.20 micron size is prepared by using iron ore, industrial hydrochloric… Read More »

Manufacture of lead accumulator modified by nanometer silicon-base oxide

Application Number: 00122188Application Date: 2000.08.04Publication Number: 1337751Publication Date: 2002.02.27Priority Information: International: H01M4/20;H01M4/68Applicant(s) Name: Zhoushan Mingri Nanometer Techn Co., Ltd.Address: Inventor(s) Name: Huang Hai;Liu Jingchun;Guan JunzhengPatent Agency Code: 33100Patent Agent: ma shilinAbstract The present invention discloses a method for producing lead accumulator (plate) by using nanometer silicon base oxide. Said lead accumulator plate is a paste-coated… Read More »

Process and equipment for preparing nm zinc oxide

Application Number: 00113078Application Date: 2000.06.27Publication Number: 1331049Publication Date: 2002.01.16Priority Information: International: C01G9/02;C01G9/00;B01J19/26Applicant(s) Name: Zhang DefuAddress: Inventor(s) Name: Zhang DefuPatent Agency Code: 51123Patent Agent: kang haiyanAbstract A process and equipment for preparing nm-class zinc oxide is disclosed. The said process includes synthesizing the precursor by wet chemical method and multi-stage spraying while controlling the temp, concentration… Read More »

Semiconductor structure having crystalline alkaline earth metal oxide interface with silicon

Application Number: 00120218Application Date: 2000.07.13Publication Number: 1334595Publication Date: 2002.02.06Priority Information: International: H01L21/00;H01L21/20;H01L29/04;H01L29/12Applicant(s) Name: Motorola Inc.Address: Inventor(s) Name: Wang Jun;W.J. Ums;J.A. HolmarkPatent Agency Code: 11038Patent Agent: fu jianjunAbstract A structure of semiconductor incldues silicon substrate, a layer or multi layers of monocrystal oxide. An boundary surface between the silicon substrate and the layer or multi layers… Read More »

Production method of high-brightness LED chip using zinc oxide as its window layer

Application Number: 00111112Application Date: 2000.05.19Publication Number: 1271966Publication Date: 2000.11.01Priority Information: International: H01L33/00;H01S5/32Applicant(s) Name: Shandong Univ.Address: Inventor(s) Name: Huang Baibiao;Zhang Zhaochun;Yu YongqinPatent Agency Code: 37200Patent Agent: liu xudongAbstract When a metallic organic compound vapour phase deposition (MOCVD) method is used for epitaxial growth of diode material, the MOCVD epitaxy growth technology in continuously used after the… Read More »

Method and catalyst for preparing oxide containing two carbon atoms from synthetic gas

Application Number: 00122220Application Date: 2000.06.24Publication Number: 1280116Publication Date: 2001.01.17Priority Information: 1999/6/25 DE 19929281.7International: C07B41/00;C07C27/04Applicant(s) Name: BASF AGAddress: Inventor(s) Name: H.Lou;H.ZhouPatent Agency Code: 72001Patent Agent: lu xinhuaAbstract In a process for preparing C2-oxygenates by reaction of CO and H2 over a rhodium-containing supported catalyst, the catalyst comprises, based on the total weight, from 0.01 to 1O%… Read More »

Continuous production process of zinc oxide whiskers and its equipment

Application Number: 00113406Application Date: 2000.04.30Publication Number: 1321798Publication Date: 2001.11.14Priority Information: International: C30B29/18;C30B29/62Applicant(s) Name: Changsha Academy of Mining & Metallurgy, Ministry of Metallurgical IndustryAddress: Inventor(s) Name: Xiao Songwen;Ma Rongjun;Xiao XiaoPatent Agency Code: 43008Patent Agent: chen kaiyaoAbstract The continuous production process of zinc oxide whisker is characterized by that said invented method utilizes mechano-chemical forced pretreatment to… Read More »

Method of making semiconductor structure containing metal oxide interface of silicone

Application Number: 00120254Application Date: 2000.07.14Publication Number: 1281245Publication Date: 2001.01.24Priority Information: 1999/7/15 US 09/354,522International: C30B25/00;H01L21/00;H01L21/20Applicant(s) Name: MotorolaAddress: Inventor(s) Name: J. Landany;L. Drupard;Yu ZhiyiPatent Agency Code: 11038Patent Agent: du rixinAbstract A method for fabricating a semiconductor structure including the steps of providing a silicon substrate (10) having a surface (12); forming amorphous silicon dioxide (14) on the… Read More »

Preparation of nanometer metal oxide material

Application Number: 00111310Application Date: 2000.08.25Publication Number: 1288861Publication Date: 2001.03.28Priority Information: International: C01G1/02Applicant(s) Name: Shandong Prov. Inst. of Marine Chemical ScienceAddress: Inventor(s) Name: Gao Shanmin;Sun ShushengPatent Agency Code: 37100Patent Agent: li zhenqiAbstract The method for preparing metal oxide nanometer material is characterized by that mixing and grinding metal salt and alkali metal hydroxide in ball-grinding mill… Read More »

Method for appts for mfg oxide Nm srystal

Application Number: 00122487Application Date: 2000.08.04Publication Number: 1283591Publication Date: 2001.02.14Priority Information: 1999/8/5 DE 19936868.6International: C01F17/00;C01F11/02;C01F7/02;C01F5/02;C01G11/00;C09K11/08Applicant(s) Name: Patent-Treuhand-Gesellschaft Fur Elektrische GmbHAddress: Inventor(s) Name: T. Friss;A. Gaen;A. KanraldPatent Agency Code: 72001Patent Agent: cheng tianzhengAbstract The present invention relates to a process and a method for producing oxidic nanocrystals, the process comprising the following steps: Introducing host lattice ions… Read More »

Wet chemical synthesizing method for lithium-manganese oxide

Application Number: 00113534Application Date: 2000.07.11Publication Number: 1333179Publication Date: 2002.01.30Priority Information: International: C01B13/32;C01G45/02Applicant(s) Name: Zhongnan Univ.Address: Inventor(s) Name: Li Yunjiao;Li Honggui;Sun PeimeiPatent Agency Code: 43200Patent Agent: gong canfanAbstract The wet chemical synthesis method of lithium-manganese oxide belongs to the field of inorganic non-metallic material and wet clemistry, and is characterized by that the manganese hydroxide is… Read More »

Method for mfg. semioconductor structure having crystalline alkaline earth metal oxide interface with silicon

Application Number: 00120260Application Date: 2000.07.14Publication Number: 1334593Publication Date: 2002.02.06Priority Information: International: C30B25/00;H01L21/00;H01L21/20Applicant(s) Name: Motorola Inc.Address: Inventor(s) Name: Yu Zhiyi;L. Drupade;K.D. OwenjaldPatent Agency Code: 11038Patent Agent: fu jianjunAbstract A method to fabricate the structure of semiconductor includes following steps: (1) providing a surface with silicon substrate, (2) forming a boundary surface in characters as single atom… Read More »

Annealing equipment for high-temp oxide crystal

Application Number: 00111883Application Date: 2000.03.03Publication Number: 1264759Publication Date: 2000.08.30Priority Information: International: C30B33/02Applicant(s) Name: Shanghai Inst. of Optical Fine Machinery, Chinese Academy of SciencesAddress: Inventor(s) Name: Xu Jun;Zhou Guoqing;Deng PeizhenPatent Agency Code: 31002Patent Agent: li lanyangAbstract A high-temp annealing equipment for oxide crystal is composed of sealing bell, crucible bearer, pad, constant-temp cylinder and heater. The… Read More »

Oxide catalyst

Application Number: 00122546Application Date: 2000.08.07Publication Number: 1283520Publication Date: 2001.02.14Priority Information: 1999/8/6 DE 19937105.9International: B01J23/04;B01J23/42;B01J23/62;C07C5/333;C07C5/48Applicant(s) Name: BASF AktiengesellschaftAddress: Inventor(s) Name: D. Heinick;K. Hass;U. StabellPatent Agency Code: 72001Patent Agent: wang jingchaoAbstract New catalysts (I) contain: (a) 10-99.9 wt.% of zirconium dioxide and/or titanium dioxide; (b) 0.1-30 wt.% of silicon dioxide; (c) 0-60 wt.% of aluminum oxide; and… Read More »

Process of producing high-purity magnetic iron oxide with ferous sulfate as by-product of titanium white production

Application Number: 00113589Application Date: 2000.08.02Publication Number: 1336327Publication Date: 2002.02.20Priority Information: International: C01G49/06Applicant(s) Name: Hunan Zhuzhou Chemical Group Co., Ltd.Address: Inventor(s) Name: Li Shinong;Chen Qiming;Chen ChuxinPatent Agency Code: 43105Patent Agent: yan linzhiAbstract A method of producing high purity magnetic iron oxide using titanium white by product ferrous sulfate is characterized in that; the ferrous sulfate is… Read More »

Compound oxide catalyst and method for preparing (methyl) propenal and (methgl) acrylic acid

Application Number: 00120312Application Date: 2000.05.25Publication Number: 1282630Publication Date: 2001.02.07Priority Information: 1999/5/25 JP 144296/99International: B01J23/88;B01J23/881;B01J23/882;B01J23/883;B01J23/888;C07C45/35Applicant(s) Name: Nippon Shokubai Co., Ltd.Address: Inventor(s) Name: Kimura Masanao;Tanimoto Michio;Onodera HideoPatent Agency Code: 72001Patent Agent: lu xinhuaAbstract Complex oxide catalysts represented by the formula, MoaWbBicFedAeBfCgDhEiOx (in which A is Ni or Co; B is Na, K, Rb, Cs or Tl; C… Read More »

Composite nanometer-level Ce-V-Ti oxide and its preparation and application

Application Number: 00112099Application Date: 2000.02.28Publication Number: 1265383Publication Date: 2000.09.06Priority Information: International: C04B35/46;C04B35/624Applicant(s) Name: Nanjing Univ.Address: Inventor(s) Name: Fan Yining;Liu Liu;Cai RuiPatent Agency Code: 32204Patent Agent: huang jiadongAbstract The composite nanometer-level oxide is composed of CeO2-V2O5-TiO2, in which the atom ratio between Ce and V is 1 to 1-8, the atom ratio between V and Ti… Read More »

Technological process for producing chromium-zirconium-copper rod material containing oxide dispersed and reinforced copper

Application Number: 00122913Application Date: 2000.08.23Publication Number: 1339613Publication Date: 2002.03.13Priority Information: International: B23K11/00;B23K35/30;C22C1/05;C22C1/10;C22C9/00Applicant(s) Name: Inst. of Metals, Chinese Academy of SciencesAddress: Inventor(s) Name: Min Jiayuan;He Guanhu;Wang BaoquanPatent Agency Code: 21002Patent Agent: zhu guanglinAbstract The present invention relates to one production process of resistive spot welding electrode. Fine copper powder and superfine aluminium oxide powder are mixed… Read More »

Polysaccharide and inorganic oxide hybridized material as electric vheological liquid and its preparing method

Application Number: 00113763Application Date: 2000.03.21Publication Number: 1314457Publication Date: 2001.09.26Priority Information: International: C10M103/06;C10M107/36Applicant(s) Name: Northwest-China Polytechnic Univ.Address: Inventor(s) Name: Zhao Xiaopeng;Duan Xu;Yin JianboPatent Agency Code: 00000Patent Agent: Abstract Unlike traditional core-shell type or copolymerization type composite organic/inorganic granular material, the disperse phase of electric rheological liquid is hybridized material in molecular size of modified starch and… Read More »

Silicon complementary metal oxide semiconductor body contact on insulator formed by grating

Application Number: 00120329Application Date: 2000.07.12Publication Number: 1280388Publication Date: 2001.01.17Priority Information: 1999/7/13 US 09/351,647International: H01L21/786;H01L21/84Applicant(s) Name: IBM Co.Address: Inventor(s) Name: Michael J. Hagruf;Jack A. MangrimanPatent Agency Code: 11038Patent Agent: wang yonggangAbstract A structure and process for making a semiconductor device with SOI body contacts under the gate conductor. The gate conductor is partitioned into segments and… Read More »

Composite ceramic material for middle-temperature oxide fuel cell

Application Number: 00112228Application Date: 2000.04.21Publication Number: 1269613Publication Date: 2000.10.11Priority Information: 2000/2/16 CN 00112085.9International: C04B35/01;H01B3/12;H01M8/02;H01M8/10Applicant(s) Name: Liu XiangrongAddress: Inventor(s) Name: Zhu Bin;Liu XiangrongPatent Agency Code: 34101Patent Agent: jin huizhenAbstract The solid fuel cell electrolyte is characterized by using cerium dioxide or ion-doped cerium dioxide and inorganic salt and mixing them to form two-phase or multi-phase composite… Read More »

Composite oxide catalyst for eliminating SO2 and NOx in gas mixture simultaneously

Application Number: 00123794Application Date: 2000.09.07Publication Number: 1288773Publication Date: 2001.03.28Priority Information: International: B01D53/60;B01D53/86Applicant(s) Name: Beijing Univ.Address: Inventor(s) Name: Yang Xiyao;Zhang Zhaoliang;Ma JunPatent Agency Code: 11200Patent Agent: zhou zhengAbstract The present invention relates to a catalyst capable of eliminating sulfur dioxide and nitrogen oxide from mixed gas simultaneously. It is a compound oxide formed from titanium dioxide… Read More »

Modified nm zinc oxide UV ray shielding and absorbing material

Application Number: 00114050Application Date: 2000.01.28Publication Number: 1260366Publication Date: 2000.07.19Priority Information: International: C09C1/04;C09C3/08Applicant(s) Name: Guangzhou Chemistry Inst., China Academy of SciencesAddress: Inventor(s) Name: Liu Xuening;Yang ZhizhongPatent Agency Code: 44001Patent Agent: li jilanAbstract The present invention adopts ultrasonic micro emulsion method to coat the surface of nanometer zinc oxide or magnesia-doped nanometer zinc oxide with non-ionic surfactant,a… Read More »

External compensation method of atropisomerism bis (phosphine oxide) compound

Application Number: 00120417Application Date: 2000.07.07Publication Number: 1281860Publication Date: 2001.01.31Priority Information: 1999/7/9 EP 99113306.7International: C07F9/53;C07F13/00Applicant(s) Name: F. Hoffmann-La Roche & Co. AGAddress: Inventor(s) Name: F. Chitzler;M. Ralohde;R. SchmiedPatent Agency Code: 11038Patent Agent: du jingyangAbstract The present invention is concerned with a novel process for the racemization of atropisomeric bisphosphine oxide compounds of formula I in their… Read More »

Process for preparing high-purity active zinc oxide by immersing in ammonia water and ammonium carbonate solution and complexing

Application Number: 00112249Application Date: 2000.04.30Publication Number: 1270144Publication Date: 2000.10.18Priority Information: International: C01G9/02Applicant(s) Name: Yang GuohuaAddress: Inventor(s) Name: Yang GuohuaPatent Agency Code: 32214Patent Agent: xia haichuAbstract A process for preparing high-purity active zinc oxide includes such steps as complex immersing of low-grade zinc oxide as raw material in mixture of ammonia water and ammonium dicarbonate, three-step… Read More »

Method for growing silicon oxide thick film by adopting TEOS source PECVD

Application Number: 00124309Application Date: 2000.09.04Publication Number: 1341957Publication Date: 2002.03.27Priority Information: International: H01L21/316;H01L21/324Applicant(s) Name: Inst. of Semiconductor, Chinese Academy of SciencesAddress: Inventor(s) Name: Lei Hongbing;Wang Hongjie;Hu XiongweiPatent Agency Code: 11021Patent Agent: rong zhiminAbstract The invention relates to a method to grow silicon oxide thick film by using TEOS source PECVD. The surface of silicon wafer is… Read More »

Hard alloy containing rare earth oxide

Application Number: 00114571Application Date: 2000.05.17Publication Number: 1277266Publication Date: 2000.12.20Priority Information: International: C22C29/06;C22C29/08Applicant(s) Name: Jianghan Petroleum Drilling Bit Co., Ltd.Address: Inventor(s) Name: Zhang Liehua;Sun Xuxin;Shuai BaichunPatent Agency Code: 42102Patent Agent: hu jianbengAbstract The hard alloy has carbide and adhesive as well as RE oxide in the amount of 0.01-3wt% that of adhesive. The process has features… Read More »

Process for preparing monocrystal filament of zinc oxide directly from zinc sulfide

Application Number: 00120602Application Date: 2000.12.16Publication Number: 1305024Publication Date: 2001.07.25Priority Information: International: C30B25/00;C30B29/16;C30B29/62Applicant(s) Name: Kunming Science and Engineering UnivAddress: Inventor(s) Name: Shen Qianghua;Zhu ZuzePatent Agency Code: 53108Patent Agent: zhan xihanAbstract A process for preparing monocrystal filament of zinc oxide directly from zinc sulfide includes such steps as proportionally mixing zinc sulfide, carbonaceous reducer and lime or… Read More »

New use of tea polyphenols and its oxide for treating hepatopathy

Application Number: 00112774Application Date: 2000.03.20Publication Number: 1314149Publication Date: 2001.09.26Priority Information: International: A61K31/05;A61K31/35;A61K35/78;A61P1/16Applicant(s) Name: Chen JiancaoAddress: Inventor(s) Name: Chen Jiancao;Niu RongPatent Agency Code: 00000Patent Agent: Abstract Tea polyphenol and its oxide (tawny extract) are used to prepare medicine and health product for treating hepatopathy, especially new medicine for treating viral hepatitis and hepatocirrhosis. They may be… Read More »