Tag Archives: photoetching

Composition for cleaning photoetching glue in integrated circuit production

Application Number: 00121756Application Date: 2000.04.26Publication Number: 1280172Publication Date: 2001.01.17Priority Information: 1999/4/26 FR 99/05237International: C11D7/32;H05K3/26Applicant(s) Name: ALF Atochem S.A.Address: Inventor(s) Name: J.-P.RaryerPatent Agency Code: 72001Patent Agent: zhong shouqiAbstract For the stripping of photoresists, the invention proposes to use a mixture of dimethyl sulphoxide (DMSO) or N-methylpyrrolidone (NMP) and 3-methoxypropylamine (MOPA).Advantageously, a little water and a corrosion… Read More »

Photoetching process

Application Number: 00122450Application Date: 2000.08.02Publication Number: 1336573Publication Date: 2002.02.20Priority Information: International: G03F7/09;H01L21/76Applicant(s) Name: Lianhua Electronics Co., Ltd.Address: Inventor(s) Name: Chen JianhonPatent Agency Code: 11105Patent Agent: tao fengbeiAbstract The invention relates to manufacturing techinque of photo etching on a substrate. The processing steps are as follows: First, a material layer where a serial of pattern is… Read More »

Low temperature metalization process of preparing thick film photoetching glue

Application Number: 00116542Application Date: 2000.06.15Publication Number: 1278612Publication Date: 2001.01.03Priority Information: International: G03F7/00;H01L21/306;H05K3/06Applicant(s) Name: Shanghai Jiaotong Univ.Address: Inventor(s) Name: Ding GuifuPatent Agency Code: 31201Patent Agent: mao cuiyingAbstract The low-temp, metallization preparation method of thick film photoresist is characterized by that on the surface of one side of polymer film, for example polymethyl methacrylate PMMA it adopts… Read More »

Projection objective for 0.35 micron photoetching

Application Number: 00109948Application Date: 2000.07.26Publication Number: 1335525Publication Date: 2002.02.13Priority Information: International: G02B11/34;G02B13/22Applicant(s) Name: Inst. of Photoelectronics Technology, Academia SinicaAddress: Inventor(s) Name: Chen Xunan;Yao Hanmin;Lin WumeiPatent Agency Code: 51001Patent Agent: zhang yigongAbstract The projection objective for 0.35 micron photoetching is used in stepped repetition projection photoetching machine for manufacture of large scale ICs. It consists of… Read More »

Method for forming photoetching offset plate figure

Application Number: 00109834Application Date: 2000.07.10Publication Number: 1280315Publication Date: 2001.01.17Priority Information: 1999/7/12 JP 198138/1999International: G03F7/00;G03F7/004;H01L21/027;H01L21/30Applicant(s) Name: NEC Corp.Address: Inventor(s) Name: Takisawa MasaharnPatent Agency Code: 11021Patent Agent: hu jiaoyuAbstract The present invention restrains development failures from occurring by a method wherein a chemical sensitizing photoresist is improved in protection rate. CONSTITUTION: This photoresist pattern forming method is… Read More »

Improvement in top layer photoetching imaging of semiconductor tech.

Application Number: 00106712Application Date: 2000.04.12Publication Number: 1274170Publication Date: 2000.11.22Priority Information: 1999/4/12 US 09/290319International: G03F7/00;H01L21/027;H01L21/302Applicant(s) Name: Infineon Tech. North America C.Address: Inventor(s) Name: S. Butt;U. P. SchledePatent Agency Code: 72001Patent Agent: liang yongAbstract A method for etching a surface (12) includes the steps of providing an under layer (14) formed on the surface and a top… Read More »

Method for improving etching-resistance ability of photoetching gum

Application Number: 00105367Application Date: 2000.03.31Publication Number: 1268678Publication Date: 2000.10.04Priority Information: 1999/3/31 US 09/282745International: G03F7/00;H01L21/027Applicant(s) Name: Infenion Tech. North America Corp.Address: Inventor(s) Name: U. P. Schilerdel;G. Kunkel;A. GootmanPatent Agency Code: 72001Patent Agent: wang jingchaoAbstract A photoresist system is provided that is easily structurable and is suitable for deep ultraviolet range patterning. An increased etching resistance to… Read More »

Chemical enhancement type photoetching gum

Application Number: 00103570Application Date: 2000.03.28Publication Number: 1268679Publication Date: 2000.10.04Priority Information: 1999/3/29 JP 085664/1999International: G03F7/031Applicant(s) Name: NEC Corp.Address: Inventor(s) Name: Yamana ShinjiPatent Agency Code: 11021Patent Agent: yan fangAbstract A far-ultraviolet resist is a chemically amplified resist comprising a base resin and a photoacid generator. As the base resin, used are resins having a cyclic carbonate bonded… Read More »

Chemical enhancement type positive photoetching gum composition

Application Number: 00103514Application Date: 2000.03.24Publication Number: 1268680Publication Date: 2000.10.04Priority Information: 1999/3/31 JP 092990/99; 1999/11/5 JP 315264/99International: G03F7/039Applicant(s) Name: Sumotomo Chemical Co., Ltd.Address: Inventor(s) Name: Uetani Yasunori;Ohashi Kataharu;Iue HirotakaPatent Agency Code: 11021Patent Agent: yan fangAbstract A chemical amplification type positive resist composition which is good in resolution, which comprises an acid generator comprising an aliphatic sulfonium… Read More »

Method for improving photoetching rubber elching resistant

Application Number: 00102364Application Date: 2000.02.17Publication Number: 1264061Publication Date: 2000.08.23Priority Information: 1999/2/17 US 09/250861International: G03F7/038;G03F7/039Applicant(s) Name: Yinfennian Technology North-American Corp.Address: Inventor(s) Name: U. P. Shlerder;G. Konker;A. GutermanPatent Agency Code: 72001Patent Agent: wu zengyongAbstract A photoresist system is provided that is easily structurable and is suitable for deep ultraviolet range patterning. An increased etching resistance to halogen-containing… Read More »

Photoetching resin composition contg cyclic olefin polymer and saturated steroid additive

Application Number: 00101869Application Date: 2000.02.04Publication Number: 1267001Publication Date: 2000.09.20Priority Information: 1999/3/11 US 09/266344International: G03F7/028Applicant(s) Name: IBM Corp.Address: Inventor(s) Name: P. R. Valanace;R. D. Allan;T. T. ValoPatent Agency Code: 72001Patent Agent: wang jingchaoAbstract Acid-catalyzed positive photoresist compositions which are imageable with 193nm radiation and are developable to form photoresist structures of high resolution, the compound can… Read More »

Cyclic olefin polymer and additive photoetching resin composition

Application Number: 00101840Application Date: 2000.02.02Publication Number: 1267000Publication Date: 2000.09.20Priority Information: 1999/3/11 US 09/266,342International: G03F7/027Applicant(s) Name: IBM Corp.Address: Inventor(s) Name: P. R. Valanace;J. F. Marniscalko;M. c. LawsonPatent Agency Code: 11038Patent Agent: huang zexiongAbstract Acid-catalyzed positive photoresist compositions which are imageable with 193nm radiation and are developable to form photoresist structures of high resolution and high etch… Read More »

Chemically enhanced possitive photoetching compositions

Application Number: 00100303Application Date: 2000.01.17Publication Number: 1261171Publication Date: 2000.07.26Priority Information: 1999/1/18 JP 009096/99International: G03F7/039;H01L21/027Applicant(s) Name: Sumitomo Chemical Co., Ltd.Address: Inventor(s) Name: Uetani Yasunori;Ikami HirotakaPatent Agency Code: 11021Patent Agent: yan fangAbstract A positive resist composition is provided which comprises a resin having 2-alkyl-2-adamantyl (meth)acrylate polymerization units represented by the following formula (I): wherein R<1> represents hydrogen… Read More »