Tag Archives: Semi-conductor

Non volatile semi-conductor memory and its manufacturing method

Application Number  00129268 Application Date  2000.09.28 Publication Number  1303127 Publication Date  2001.07.11 Priority Information   2000/1/5 JP 327/00   International Classification  H01L21/77;H01L21/8247   Applicant(s) Name  Mitsubishi Electric Corp.   Address     Inventor(s) Name  Sakamoto Osamu;Tsuji Naoki;Kiyomizu Satoru   Patent Agency Code  72001 Patent Agent  yang kai AbstractThe invention provides a nonvolatile semiconductor memory device,… Read More »

Quasi-one dimension fibre semi-conductor with linear carbon structure and its producing method and apparatus, and heating element using the same fibre semi-conductor

Application Number  00129048 Application Date  2000.08.22 Publication Number  1287466 Publication Date  2001.03.14 Priority Information   1999/8/23 KR 35041/1999; 2000/6/28 KR 36021/2000   International Classification  H05B3/14   Applicant(s) Name  KOROS Co., Ltd.   Address     Inventor(s) Name  Kwon Sanghevi;Alexander. Dmitlijevich;Tsoiy   Patent Agency Code  72002 Patent Agent  han hong AbstractThe present invention relates to quasi-one… Read More »

Semi-conductor manufacturing system

Application Number  00128791 Application Date  1996.07.16 Publication Number  1304779 Publication Date  2001.07.25 Priority Information   1995/7/17 US 08/503,325; 1996/6/14 US 08/665,142   International Classification  B01D53/22;B01D71/00;H01L21/00   Applicant(s) Name  L'air Liquid Socite Anonyme Pour L'Etu de Et L'Exploitation Des Procedes Georges   Address     Inventor(s) Name  Y.E. Li;J.E. Paganissi;D. Wasarau   Patent Agency Code  11038… Read More »

Manufacturing method of semi-conductor device

Application Number: 00118472Application Date: 1998.07.29Publication Number: 1282982Publication Date: 2001.02.07Priority Information: 1997/7/30 JP 204534/97International: H01L21/56;H01L21/58;H01L21/60Applicant(s) Name: Hitachi Ltd.Address: Inventor(s) Name: Fujisawa Atsushi;Imano Kifumi;Osaka ShintakePatent Agency Code: 11038Patent Agent: wang yonggangAbstract In a ball grid array type semiconductor package, a semiconductor chip is mounted through an adhesive material on a surface of a flexible film substrate. Plural… Read More »

Manufacturing method of semi-conductor device

Application Number: 00118473Application Date: 2000.06.30Publication Number: 1282983Publication Date: 2001.02.07Priority Information: 1997/7/30 JP 204534/97International: H01L21/56;H01L21/58;H01L21/60Applicant(s) Name: Hitachi Ltd.Address: Inventor(s) Name: Fujisawa Atsushi;Imano Kifumi;Osaka ShintakePatent Agency Code: 11038Patent Agent: wang yonggangAbstract In a ball grid array type semiconductor package, a semiconductor chip is mounted through an adhesive material on a surface of a flexible film substrate. Plural… Read More »

Automatized system and method for controlling automatic guiding cart for use in semi-conductor factory

Application Number: 00118687Application Date: 2000.06.21Publication Number: 1278618Publication Date: 2001.01.03Priority Information: 1999/6/22 KR 23545/99International: G06F9/00;G06F13/00;H01L21/00Applicant(s) Name: Hyundai Electronic Industries Co., Ltd.Address: Inventor(s) Name: Ko Myung-Chae;Cho Jung-SoPatent Agency Code: 11105Patent Agent: huang xiaolinAbstract A method for controlling an automatic guide vehicle (AGV) in a semiconductor factory automation (FA) system, includes the steps of: receiving and storing the… Read More »

Semi-conductor memory possessing test pattern decision circuit

Application Number: 00119953Application Date: 2000.06.30Publication Number: 1303101Publication Date: 2001.07.11Priority Information: 1999/10/29 JP 309668/99International: G11C11/401;G11C11/4078;G11C29/00Applicant(s) Name: Mitsubishi Electric Corp.Address: Inventor(s) Name: Ito Taka;Tsukikawa Nobuhiko;Aritomi KengePatent Agency Code: 72001Patent Agent: yang kaiAbstract There is provided a test mode decision circuit of a semiconductor memory device which in the first WCBR cycle responds to an address key by… Read More »

Equipment for producing semi-conductor products

Application Number: 00120086Application Date: 2000.05.19Publication Number: 1277138Publication Date: 2000.12.20Priority Information: 1999/5/19 DE 19922937.6International: B65G49/07;H01L21/00Applicant(s) Name: Siemens AktiengesellschaftAddress: Inventor(s) Name: J. ElgerPatent Agency Code: 72001Patent Agent: zhang zhichengAbstract An equipment for producing semiconductor product is provided to transfer semiconductor products efficiently and economically by providing a transfer system provided with a supply system, which travels at… Read More »

Automatized system and method for use in semi-conductor factory

Application Number: 00121998Application Date: 2000.06.22Publication Number: 1278619Publication Date: 2001.01.03Priority Information: 1999/6/22 KR 23538/99International: G06F9/00;G06F17/00;H01L21/00Applicant(s) Name: Hyundai Electronic Industries Co., Ltd.Address: Inventor(s) Name: kim Yong-ChinPatent Agency Code: 11105Patent Agent: huang minAbstract A method for monitoring at least one server in a semiconductor factory automation (FA) system, includes the steps of: a) providing server state information from… Read More »

Synchrnous semi-conductor storage

Application Number: 00122505Application Date: 2000.06.22Publication Number: 1278646Publication Date: 2001.01.03Priority Information: 1999/6/22 JP 175332/99International: G11C11/407;G11C11/417Applicant(s) Name: Mitsubishi Electric Co., Ltd.Address: Inventor(s) Name: Yamanaka TadaakiPatent Agency Code: 72001Patent Agent: yang kaiAbstract A control signal generator 28 generating an internal control signal RAL and the like by decoding an external control signal/RAS and the like is divided into… Read More »

Automatized system and semi-conductor chip transfering method for use in semiconductor factory

Application Number: 00122667Application Date: 2000.05.20Publication Number: 1278620Publication Date: 2001.01.03Priority Information: 1999/5/20 KR 18270/99; 1999/6/22 KR 23547/99; 1999/6/22 KR 23548/99; 1999/6/30 KR 25868/99; 1999/6/30 KR 25981/99International: G06F9/00;H01L21/00;B65G49/07Applicant(s) Name: Hyundai Electronic Industries Co., Ltd.Address: Inventor(s) Name: Lee Dai-Ho;Chae Jong-Wun;Lee U-kyuPatent Agency Code: 11105Patent Agent: tao fengbeiAbstract A method for transporting semiconductor wafers in semiconductor factory automation system,… Read More »

Semi-conductor memory possessing high speed information packet data input

Application Number: 00126345Application Date: 2000.09.07Publication Number: 1303103Publication Date: 2001.07.11Priority Information: 2000/1/6 JP 859/00International: G11C7/00;G11C11/4063;G11C11/413Applicant(s) Name: Mitsubishi Electric Corp.Address: Inventor(s) Name: Tsujino Mitsuki;Hirayama Kazutoshi;Yamazaki KyojiPatent Agency Code: 72001Patent Agent: yang kaiAbstract A semiconductor memory device uses a clock signal from a tester to allow a test clock conversion circuit and a DLL circuit to generate a… Read More »

Producing method of relay base plate for installation of semi-conductor elements

Application Number: 00118082Application Date: 2000.06.09Publication Number: 1277458Publication Date: 2000.12.20Priority Information: 1999/6/10 JP 164148/99International: H01L21/48;H01L21/60;H01L23/50;H05K3/00Applicant(s) Name: Sony Chemical Co., Ltd.Address: Inventor(s) Name: Arimitsu Yoshio;Kanaida YutakaPatent Agency Code: 72001Patent Agent: yang kaiAbstract A semiconductor element mounting interposer is produced by (A) forming a conducting circuit that comprises motherboard connecting electrodes 2 and plated leads 3 on an… Read More »

Semi-conductor integrated circuit with measurable component block

Application Number: 00108564Application Date: 1995.08.28Publication Number: 1277361Publication Date: 2000.12.20Priority Information: 1994/8/29 JP 203842/1994; 1994/10/17 JP 250535/1994International: G01R31/28;G06F11/267;G01R31/3185Applicant(s) Name: Matsushita Electric Industrial Co., Ltd.Address: Inventor(s) Name: Motohara Akira;Takeoka Sadami;Kishi TetsujiPatent Agency Code: 11038Patent Agent: wang sibengAbstract Three blocks cascaded to one another in an LSI, namely, an input module, a macro module and an output module,… Read More »

Method for forming refraction-metal-silicide layer of semi-conductor device

Application Number: 00108279Application Date: 2000.04.28Publication Number: 1272686Publication Date: 2000.11.08Priority Information: 1999/4/28 JP 121410/1999International: H01L21/283;H01L21/3205;H01L21/336;H01L21/8238Applicant(s) Name: NEC Corp.Address: Inventor(s) Name: Hamanaka Nobuaki;Iue Ken;Sangi IkuPatent Agency Code: 11021Patent Agent: li yueAbstract A method for forming a silicide of a metal with high-melting-point in a semiconductor device includes the step of removing a higher-density impurity area which acts… Read More »

Cleaning liquid and manufacturing method of semi-conductor device using said cleaning liquid

Application Number: 00106995Application Date: 2000.04.27Publication Number: 1271767Publication Date: 2000.11.01Priority Information: 1999/4/28 JP 121225/99International: C11D7/32;H01L21/461Applicant(s) Name: Mitsubishi Electric Corp.Address: Inventor(s) Name: Kanno Itaru;Muranaka Seishi;Yamamoto HiromasaPatent Agency Code: 72001Patent Agent: yang kaiAbstract Resist residue attached on a second interconnection layer and a filling metal film exposed on a silicon substrate is removed using a cleaning agent including… Read More »

Nonvolatile semi-conductor storage and its producing method

Application Number: 00106967Application Date: 2000.04.26Publication Number: 1277460Publication Date: 2000.12.20Priority Information: 1999/4/26 JP 118115/1999International: H01L21/82;H01L27/115Applicant(s) Name: Toshiba K. K.Address: Inventor(s) Name: Aita Akira;Shirata Riichiro;Kiyomizu KazuyutakaPatent Agency Code: 11038Patent Agent: wang yonggangAbstract After oxidation amount and an annealing condition can be optimized, even if transistors are different from each other in the gate length in an EEPROM… Read More »

Mask used in electron beam exposure and manufacturing method and manufacturing method of semi-conductor device

Application Number: 00106190Application Date: 2000.04.28Publication Number: 1271870Publication Date: 2000.11.01Priority Information: 1999/4/28 JP 123059/99International: G03F1/16;H01L21/027Applicant(s) Name: NEC Corp.Address: Inventor(s) Name: Yamashita KoPatent Agency Code: 11219Patent Agent: mu dejunAbstract The invention relates to a manufacturing method of semi-conductor device. A mask material which is the same as that of a wafer to be exposed is prepared, and… Read More »

Semi-conductor storage means

Application Number: 00105587Application Date: 2000.03.29Publication Number: 1268437Publication Date: 2000.10.04Priority Information: 1999/3/30 JP 087622/99International: B41J5/30;G11C11/34Applicant(s) Name: NEC Corp.Address: Inventor(s) Name: Takuta KimihitoPatent Agency Code: 11219Patent Agent: mu dejunAbstract An operation-control circuit for controlling write into a memory cell in a memory cell array is provided between the memory cell array and data input and output buffers.… Read More »

Semi-conductor and its producing method

Application Number: 00104393Application Date: 2000.03.23Publication Number: 1267912Publication Date: 2000.09.27Priority Information: 1999/3/23 JP 078145/1999International: H01L21/283;H01L21/768;H01L23/52Applicant(s) Name: Toshiba K. K.Address: Inventor(s) Name: Iikawa Osamu;Nigita Junichi;Katata TomioPatent Agency Code: 11038Patent Agent: wang yonggangAbstract Disclosed is a semiconductor device including a semiconductor substrate, an interlayer insulating film formed on one main surface of the semiconductor substrate and having a… Read More »

Semi-conductor storage with block unit to erase

Application Number: 00104392Application Date: 2000.03.23Publication Number: 1267888Publication Date: 2000.09.27Priority Information: 1999/3/23 JP 077432/1999International: G11C11/34;H01L27/10Applicant(s) Name: Toshiba K. K.Address: Inventor(s) Name: Taura Tadayuki;Akumi ShigeshiPatent Agency Code: 11038Patent Agent: wang yonggangAbstract A semiconductor memory device includes a plurality of block cores which are each treated as one unit at the erase time, an R/D block core which… Read More »

Method of manufacturing semi-conductor device

Application Number: 00104111Application Date: 1993.12.09Publication Number: 1282980Publication Date: 2001.02.07Priority Information: 1992/12/9 JP 351916/92; 1993/1/18 JP 23289/93International: H01L21/00Applicant(s) Name: Semiconductor Energy Laboratory Co., Ltd.Address: Inventor(s) Name: Miyasaki Minora A. Murakami;Taka HoshunPatent Agency Code: 72001Patent Agent: zhang zhichengAbstract An electronic circuit formed on an insulating substrate and having thin-film transistors (TFT) comprising semiconductor layers. The thickness of… Read More »

Non-volatile semi-conductor storage

Application Number: 00104076Application Date: 2000.03.17Publication Number: 1267890Publication Date: 2000.09.27Priority Information: 1999/3/18 JP 074039/1999; 1999/3/18 JP 074045/199International: G11C16/00;G11C29/00Applicant(s) Name: Toshiba K. K.Address: Inventor(s) Name: Tanzawa Akira;Taura Tadayuki;Kuriyama MasaoPatent Agency Code: 11038Patent Agent: wang yonggangAbstract A potential generating circuit generates two types of erase verify threshold values EVT1 and EVT2. These values satisfy the relationship of EVT2=EVT1+(OEVT-EVTL).… Read More »

Non-volatile memory of semi-conductor and its producing method

Application Number: 00104074Application Date: 2000.03.17Publication Number: 1267915Publication Date: 2000.09.27Priority Information: 1999/3/18 JP 073074/1999; 1999/6/30 JP 185118/1999International: H01L21/8247;H01L27/115Applicant(s) Name: Toshiba K. K.Address: Inventor(s) Name: Aida Hiroaki;Isobe Watsuguki;yamada SeishiPatent Agency Code: 11038Patent Agent: wang yonggangAbstract A manufacturing method of nonvolatile semiconductor memory device is disclosed, wherein trench-type devices are separated to form the device region and which… Read More »

Method for making semi-conductor device

Application Number: 00103559Application Date: 2000.03.24Publication Number: 1268768Publication Date: 2000.10.04Priority Information: 1999/3/26 JP 84307/99International: H01L21/28;H01L21/302;H01L21/3065;H01L21/768Applicant(s) Name: NEC Corp.Address: Inventor(s) Name: Yutawa MitsushigePatent Agency Code: 11219Patent Agent: mu dejunAbstract A method for fabricating a semiconductor device, including the steps of: forming a contact hole 208 so as to cause the etching stopper 205 on the substrate 201… Read More »

Semi-conductor device and its producing method

Application Number: 00102992Application Date: 2000.03.14Publication Number: 1267916Publication Date: 2000.09.27Priority Information: 1999/3/15 JP 068147/1999International: H01L29/737;H01L21/203Applicant(s) Name: Matsushita Electric Industrial Co., Ltd.Address: Inventor(s) Name: Asai Akira;Onishi Teruhito;Takaki KatashiPatent Agency Code: 11021Patent Agent: wang huiminAbstract This invention provides a semiconductor device and its fabrication method characterized by less transistor area, less leaky current, and more controllable fabrication. On… Read More »