Tag Archives: silicon-germanium

Method of forming silicon-germanium base zone of heterojunction bipolar transistor

Application Number  00129493 Application Date  2000.12.29 Publication Number  1304169 Publication Date  2001.07.18 Priority Information   2000/1/10 US 09/480033   International Classification  H01L21/20;H01L21/328   Applicant(s) Name  International Business Machine Corp.   Address     Inventor(s) Name  Huang Fengyi   Patent Agency Code  72001 Patent Agent  chen ji AbstractA process for forming a silicon-germanium base of a… Read More »