Tag Archives: silicon

Fruit and vegetable preserving method with air regulating silicon window

Application Number  00129454 Application Date  2000.12.27 Publication Number  1361050 Publication Date  2002.07.31 Priority Information     International Classification  B65D81/24   Applicant(s) Name  Xie Hongdong   Address     Inventor(s) Name  Xie Hongdong   Patent Agency Code  37104 Patent Agent  song mengzheng AbstractThe fruit and vegetable preserving method incldues the following steps: selection of fruit and… Read More »

Method for producing silicon carbide

Application Number  00129197 Application Date  2000.10.11 Publication Number  1290652 Publication Date  2001.04.11 Priority Information     International Classification  C01B31/36   Applicant(s) Name  Su Zhanzhong   Address     Inventor(s) Name  Su Zhanzhong   Patent Agency Code  64100 Patent Agent  wang jishu AbstractThe production of silicon carbide uses the production process and equipment basically same as… Read More »

Silicon carbide producing process

Application Number  00128913 Application Date  2000.09.14 Publication Number  1287097 Publication Date  2001.03.14 Priority Information     International Classification  C01B31/36   Applicant(s) Name  Jia Yudong   Address     Inventor(s) Name  Jia Yudong   Patent Agency Code  64100 Patent Agent  luo yongqian AbstractThe present invention relates to metallurgical chemical engineering and is especially one silicon carbide… Read More »

Rubber mixture contg. hydroxy and/or carboxy rubber and hydrophobic silicon oxide or silicates filler

Application Number  00128453 Application Date  2000.11.22 Publication Number  1296991 Publication Date  2001.05.30 Priority Information   1999/11/22 DE 19956097.8   International Classification  B60C1/00;C08K3/34;C08L21/00   Applicant(s) Name  Bayer AG   Address     Inventor(s) Name  T. Schorr;R. Peter;R. Steiger   Patent Agency Code  72001 Patent Agent  pang lizhi AbstractThe rubber mixtures according to the invention comprising a… Read More »

Technology for producing wide band of orientated silicon steel with thickness less than or equal to 0.15mm

Application Number: 00114390Application Date: 2000.03.03Publication Number: 1264748Publication Date: 2000.08.30Priority Information: International: C21D8/12;C22C38/16Applicant(s) Name: Wuhan Iron and Steel (Group) Co.Address: Inventor(s) Name: Ji Fuxiang;Tao Jijun;Ying HongPatent Agency Code: 42102Patent Agent: duan jiaojiaoAbstract A technology for manufacturing wide band of orientated silicon steel with thickness less than 0.15 mm features that its main components are C (0.042-0.046… Read More »

Method for mfg. semioconductor structure having crystalline alkaline earth metal oxide interface with silicon

Application Number: 00120260Application Date: 2000.07.14Publication Number: 1334593Publication Date: 2002.02.06Priority Information: International: C30B25/00;H01L21/00;H01L21/20Applicant(s) Name: Motorola Inc.Address: Inventor(s) Name: Yu Zhiyi;L. Drupade;K.D. OwenjaldPatent Agency Code: 11038Patent Agent: fu jianjunAbstract A method to fabricate the structure of semiconductor includes following steps: (1) providing a surface with silicon substrate, (2) forming a boundary surface in characters as single atom… Read More »

Process for preparation of olefines in existing of dialkoxy silicon cyclohexylane

Application Number: 00124266Application Date: 2000.05.18Publication Number: 1285360Publication Date: 2001.02.28Priority Information: 1999/5/18 FR 99/06279International: C07F7/18;C08F4/646;C08F4/656;C08F10/00Applicant(s) Name: Atophna SAAddress: Inventor(s) Name: C. Gerisen;D. Bate-Kutero;D. KuteroPatent Agency Code: 72001Patent Agent: lu xinhuaAbstract The invention relates to dialkoxysilacyclohexane, preparation method thereof, and use as electron donor during polymerization of olefin such as propylene or ethane. In at least one… Read More »

One-step process for preparing reactive sintered ceramic material of silicon carbonate from pure carbon powder dispersed in water base

Application Number: 00114425Application Date: 2000.03.15Publication Number: 1264687Publication Date: 2000.08.30Priority Information: International: C04B35/573Applicant(s) Name: Wuhan Polytechnical Univ.Address: Inventor(s) Name: Wu Qide;Wei Mingkun;Wang HuaidePatent Agency Code: 42102Patent Agent: wang yuhuaAbstract A process for preparing high-performance reactive sintered ceramic of silicon carbide from pure carbon powder and waer as disperser includes adding additive to prepare high-dispersivity water-base slurry,… Read More »

Silicon complementary metal oxide semiconductor body contact on insulator formed by grating

Application Number: 00120329Application Date: 2000.07.12Publication Number: 1280388Publication Date: 2001.01.17Priority Information: 1999/7/13 US 09/351,647International: H01L21/786;H01L21/84Applicant(s) Name: IBM Co.Address: Inventor(s) Name: Michael J. Hagruf;Jack A. MangrimanPatent Agency Code: 11038Patent Agent: wang yonggangAbstract A structure and process for making a semiconductor device with SOI body contacts under the gate conductor. The gate conductor is partitioned into segments and… Read More »

Method for growing silicon oxide thick film by adopting TEOS source PECVD

Application Number: 00124309Application Date: 2000.09.04Publication Number: 1341957Publication Date: 2002.03.27Priority Information: International: H01L21/316;H01L21/324Applicant(s) Name: Inst. of Semiconductor, Chinese Academy of SciencesAddress: Inventor(s) Name: Lei Hongbing;Wang Hongjie;Hu XiongweiPatent Agency Code: 11021Patent Agent: rong zhiminAbstract The invention relates to a method to grow silicon oxide thick film by using TEOS source PECVD. The surface of silicon wafer is… Read More »

Aqueous silicon steel sheet paint

Application Number: 00114587Application Date: 2000.05.24Publication Number: 1324902Publication Date: 2001.12.05Priority Information: International: C09D5/00;C09D133/02;C09D183/04Applicant(s) Name: Xinlian Chemical Industry Co., Ltd., WuhanAddress: Inventor(s) Name: Shen Wei;Tong Shenyi;Wang HubiaoPatent Agency Code: 42104Patent Agent: hu tianxiAbstract A water paint for silicon-steel sheet is comprised of 20-80% of bonding agent, 5-40% of inorganic pigment, 0-15% of adjuvant and 5-75% of water… Read More »

Moulding type rubber foam composition, silicon rubber foam and method for procucing it

Application Number: 00120399Application Date: 2000.07.18Publication Number: 1281872Publication Date: 2001.01.31Priority Information: 2000/3/10 JP 067112/2000; 1999/7/19 JP 204781/1999; 1999/8/26 JP 239304/1999International: C08J9/02;C08L83/04Applicant(s) Name: Dow Dorning Toray Oxosilane Co., Ltd.Address: Inventor(s) Name: Honma Hiroshi;Hamada MitsuoPatent Agency Code: 11038Patent Agent: sun aiAbstract A moldable silicone rubber sponge composition comprising (A) 100 weight parts silicone rubber base compound with a… Read More »

Method for spraying and depositing high silicon aluminium alloy

Application Number: 00124660Application Date: 2000.09.27Publication Number: 1345983Publication Date: 2002.04.24Priority Information: International: C22C1/00;C22C21/02Applicant(s) Name: Beijing Univ. of Science and TechnologyAddress: Inventor(s) Name: Zhang Jishan;Wang Feng;Yang BingPatent Agency Code: 11207Patent Agent: liu rueAbstract The present invention relates to a preparation method of hypereutectic alusil alloy by adopting injection depositino process in order to improve its tissue and… Read More »

Technology for making device with silicon (SOI) circuit on insulating layer by low-dosage oxygen injection

Application Number: 00115501Application Date: 2000.04.27Publication Number: 1279505Publication Date: 2001.01.10Priority Information: International: H01L21/265;H01L21/314;H01L21/324Applicant(s) Name: Shanghai Inst. of Metallurgy, Chinese Academy of SciencesAddress: Inventor(s) Name: Wang Lianwei;Li Chenglu;Zhang MiaoPatent Agency Code: 31002Patent Agent: pan zhensuAbstract A technology for making the silicon-on-insulating (SOI) circuit by low-dosage oxygen injection includes such steps as low-dosage oxygen injection of (4-6)X10 to… Read More »

Process for preparing silicon carbide crystal whisker from river sand

Application Number: 00120789Application Date: 2000.07.14Publication Number: 1276340Publication Date: 2000.12.13Priority Information: International: C01B31/36;C30B29/36;C30B29/62Applicant(s) Name: Qinghua Univ.Address: Inventor(s) Name: Pan Wei;Huang Yue;Chen JianPatent Agency Code: 11201Patent Agent: luo wenqunAbstract A process for preparing silicon carbide crystal whisker with length/diameter ratio of 20 : 1 using river sand as raw material includes such steps as pickling with diluted… Read More »

Lithium silicon powder used as gypsum reinforcing agent and plastering gypsum containing same

Application Number: 00124973Application Date: 2000.09.27Publication Number: 1345701Publication Date: 2002.04.24Priority Information: International: C04B18/14;C04B22/00;C04B24/00;C04B28/14Applicant(s) Name: Architectural Science Inst., Xinjiang Uyger Autonomous RegionAddress: Inventor(s) Name: Yang Heng;Yang AnqiPatent Agency Code: 11223Patent Agent: wang mengxiaAbstract The present invention provides a gypsum reinforcing agent-lithium-silicone powder and plastering gypsum containing said gypsum reinforcing agent. Said invention not only can use waste… Read More »

Silicon photowave guide material on glass and its preparation

Application Number: 00115581Application Date: 2000.04.29Publication Number: 1274692Publication Date: 2000.11.29Priority Information: International: C03C17/02;C03C27/06Applicant(s) Name: Shanghai Inst. of Metallurgy, Chinese Academy of SciencesAddress: Inventor(s) Name: Wang Yuelin;Wang Wenhui;Li TiePatent Agency Code: 31002Patent Agent: zhang zechunAbstract The photowave guide material comprises glass as substrate, silicon wave guide layer and glass or glass-silica limiting layer. It is prepared through… Read More »

Method for preparing crystalline alkaline earth metal oxide on silicon substrate

Application Number: 00121617Application Date: 2000.07.21Publication Number: 1334361Publication Date: 2002.02.06Priority Information: International: C30B25/02Applicant(s) Name: Motorola Inc.Address: Inventor(s) Name: Z. Yu;J.A. Hallmark;J.K. AbervaPatent Agency Code: 11038Patent Agent: duan chengenAbstract A process for preparing crystal alkali-earth metal oxide on Si substrate incldues providing Si substrate with non-crystal SiO2 on its surface, heating to 700-800 deg.C, molecular epitaxy in… Read More »

Polyolefinic resin for coating silicon dioxide and its preparation method

Application Number: 00125991Application Date: 2000.10.16Publication Number: 1293216Publication Date: 2001.05.02Priority Information: 2000/3/17 JP 076885/2000; 2000/7/26 JP 224760/2000; 1999/10/18 JP 295815/1999International: C08J7/04Applicant(s) Name: Nippon Sheet Glass Co., Ltd.Address: Inventor(s) Name: Sakai Yasuto;Saito Yasuhiro;Inomata HiroyukiPatent Agency Code: 11038Patent Agent: long chuangongAbstract The present invention is to establish a process for production of highly durable organic silicon-based coatings with… Read More »

Making process of great-angle Y-branch silicon luminous-power distributor

Application Number: 00115582Application Date: 2000.04.29Publication Number: 1274857Publication Date: 2000.11.29Priority Information: International: G02B6/28;G03F7/09Applicant(s) Name: Shanghai Inst. of Metallurgy, Chinese Academy of SciencesAddress: Inventor(s) Name: Wang Yuelin;Wang Wenhui;Li TiePatent Agency Code: 31002Patent Agent: zhang zechunAbstract The present invention features that via doping to change the refractivity at the branch point and the technological process of first doping… Read More »

Re-doping method for vertically pulled monocrystalline silicon

Application Number: 00122075Application Date: 2000.08.16Publication Number: 1337476Publication Date: 2002.02.27Priority Information: International: C30B15/04Applicant(s) Name: Zhejiang Univ.Address: Inventor(s) Name: Shen Yijun;Ma Xiangyang;Tian DaxiPatent Agency Code: 33200Patent Agent: zhang fagaoAbstract The heavily-doping method for growth of vertical-pulling monocrystal silicon incldues the following steps: (1) using high-purity silicon to make "umbrella"-shaped doping device, and "umbrella handle" is crystal seed;… Read More »

One-step hydrolysis process of producing active white carbon from silicon tetrafluoride by product of phosophate fertilizer plant

Application Number: 00112161Application Date: 2000.03.23Publication Number: 1267634Publication Date: 2000.09.27Priority Information: International: C01B33/113;C09C1/28Applicant(s) Name: Li YuanzhiAddress: Inventor(s) Name: Li Yuanzhi;Fan YiningPatent Agency Code: 32204Patent Agent: chen jianheAbstract Silicon tetrafluoride gas after dedusted and purified is introduced directly into deionized water containing proper amount of surfactant while fast stirring for hydrolysis, the hydrolysis temperature is 20-80 deg.c… Read More »

Integrated silicon microresistance type acceleration sensor and its manufacturing method

Application Number: 00126172Application Date: 2000.08.25Publication Number: 1281986Publication Date: 2001.01.31Priority Information: International: G01D5/16;G01P15/12Applicant(s) Name: Micron & Nanometer Technology Research Centre, Huabei Engineering CollegeAddress: Inventor(s) Name: Zhang Wendong;Li Yonghong;Xiong JijunPatent Agency Code: 14105Patent Agent: li yiguiAbstract The present invention provides an integrated silicon microresistive acceleration transducer and its production method. it includes base, shell body and detection… Read More »

Preparation of nanometer-level silicon material

Application Number: 00117242Application Date: 2000.07.07Publication Number: 1277152Publication Date: 2000.12.20Priority Information: International: C01B33/021Applicant(s) Name: Zhongshan Univ.Address: Inventor(s) Name: Xu Ningsheng;Wu Zhisheng;Deng ShaozhiPatent Agency Code: 44200Patent Agent: ye xianjingAbstract In the heating evaporation process, SiC powder is used as material and through vacuum pumping, introducing inert gas as protecting gas and heating at 1600-2000 deg.C for one… Read More »

Process for preparing silicon carbide with by-product of graphite blocks

Application Number: 00122108Application Date: 2000.07.17Publication Number: 1334236Publication Date: 2002.02.06Priority Information: International: C01B31/04;C01B31/36Applicant(s) Name: Yin ZhongfuAddress: Inventor(s) Name: Yin ZhongfuPatent Agency Code: 21212Patent Agent: li hongfuAbstract A process for preparing silicon carbide as primary product and graphite blocks as by-product features that the core material of furnace is the charcoal blocks generated by calcining waste and… Read More »

Deep silicon slot technology

Application Number: 00112286Application Date: 2000.05.16Publication Number: 1283869Publication Date: 2001.02.14Priority Information: International: H01L21/76Applicant(s) Name: Wuxi Microelectronic Science and Research CenterAddress: Inventor(s) Name: Zheng YijunPatent Agency Code: 32104Patent Agent: cao zuliangAbstract A technology for making deep silicon slot includes oxidizing to generate a layer of medium film (hundreds nms-one micron in thickness) on silicon substrate, coating photoresist… Read More »

Improved method for simulating silicon device on insulator

Application Number: 00126190Application Date: 2000.08.31Publication Number: 1287333Publication Date: 2001.03.14Priority Information: 1999/9/2 FR 09/388,594International: G06G7/48;H01L21/84;H01L27/12Applicant(s) Name: International Business Machine Corp.Address: Inventor(s) Name: George E. Smith;III;Farleyboz. Athadelargy;Paul.D. ManchePatent Agency Code: 11038Patent Agent: fu jianjunAbstract To simulate an SOI element by setting a floating body voltage to an optional desired value at the optional point of time during… Read More »

Silicon mixed with structural oxygen, production method and use thereof

Application Number: 00118627Application Date: 2000.06.16Publication Number: 1278565Publication Date: 2001.01.03Priority Information: 1999/6/17 DE 19927604.8International: C30B29/06;H01L31/0256Applicant(s) Name: Bayer Co.Address: Inventor(s) Name: C. Haysler;H. U. Herfuss;W. KerkerPatent Agency Code: 72001Patent Agent: lu xinhuaAbstract The present invention relates to silicon with a high oxygen content and, at the same time, a high density of crystal lattice dislocations, and to… Read More »

Process for selectively preparing semispherical silicon grain

Application Number: 00122773Application Date: 2000.08.14Publication Number: 1338776Publication Date: 2002.03.06Priority Information: International: H01L21/8242Applicant(s) Name: Lianhua Electronic Co LtdAddress: Inventor(s) Name: Wu DeyuanPatent Agency Code: 11105Patent Agent: tao fengbeiAbstract A process for selectively preparing semi-spherical silicon grain is suitable for a substrate, on which a lower electrode with a protooxide layer of polysilicon capacitor is formed, and… Read More »

Modifier for silicon modified asphalt and its preparing method

Application Number: 00113119Application Date: 2000.08.18Publication Number: 1339524Publication Date: 2002.03.13Priority Information: International: C08K3/36;C08K9/00;C08L95/00Applicant(s) Name: Yu QianAddress: Inventor(s) Name: Yu QianPatent Agency Code: 53100Patent Agent: xu lingjuAbstract The powdered asphalt modifier is prepared by using diatomite as raw material and through low temperature roasting and air separation to purity and modify. Asphalt modified by the modifier has… Read More »