Tag Archives: silicon

Fruit and vegetable preserving method with air regulating silicon window

Application Number  00129454 Application Date  2000.12.27 Publication Number  1361050 Publication Date  2002.07.31 Priority Information     International Classification  B65D81/24   Applicant(s) Name  Xie Hongdong   Address     Inventor(s) Name  Xie Hongdong   Patent Agency Code  37104 Patent Agent  song mengzheng AbstractThe fruit and vegetable preserving method incldues the following steps: selection of fruit and… Read More »

Method for producing silicon carbide

Application Number  00129197 Application Date  2000.10.11 Publication Number  1290652 Publication Date  2001.04.11 Priority Information     International Classification  C01B31/36   Applicant(s) Name  Su Zhanzhong   Address     Inventor(s) Name  Su Zhanzhong   Patent Agency Code  64100 Patent Agent  wang jishu AbstractThe production of silicon carbide uses the production process and equipment basically same as… Read More »

Silicon carbide producing process

Application Number  00128913 Application Date  2000.09.14 Publication Number  1287097 Publication Date  2001.03.14 Priority Information     International Classification  C01B31/36   Applicant(s) Name  Jia Yudong   Address     Inventor(s) Name  Jia Yudong   Patent Agency Code  64100 Patent Agent  luo yongqian AbstractThe present invention relates to metallurgical chemical engineering and is especially one silicon carbide… Read More »

Rubber mixture contg. hydroxy and/or carboxy rubber and hydrophobic silicon oxide or silicates filler

Application Number  00128453 Application Date  2000.11.22 Publication Number  1296991 Publication Date  2001.05.30 Priority Information   1999/11/22 DE 19956097.8   International Classification  B60C1/00;C08K3/34;C08L21/00   Applicant(s) Name  Bayer AG   Address     Inventor(s) Name  T. Schorr;R. Peter;R. Steiger   Patent Agency Code  72001 Patent Agent  pang lizhi AbstractThe rubber mixtures according to the invention comprising a… Read More »

Polyolefinic resin for coating silicon dioxide and its preparation method

Application Number: 00125991Application Date: 2000.10.16Publication Number: 1293216Publication Date: 2001.05.02Priority Information: 2000/3/17 JP 076885/2000; 2000/7/26 JP 224760/2000; 1999/10/18 JP 295815/1999International: C08J7/04Applicant(s) Name: Nippon Sheet Glass Co., Ltd.Address: Inventor(s) Name: Sakai Yasuto;Saito Yasuhiro;Inomata HiroyukiPatent Agency Code: 11038Patent Agent: long chuangongAbstract The present invention is to establish a process for production of highly durable organic silicon-based coatings with… Read More »

Making process of great-angle Y-branch silicon luminous-power distributor

Application Number: 00115582Application Date: 2000.04.29Publication Number: 1274857Publication Date: 2000.11.29Priority Information: International: G02B6/28;G03F7/09Applicant(s) Name: Shanghai Inst. of Metallurgy, Chinese Academy of SciencesAddress: Inventor(s) Name: Wang Yuelin;Wang Wenhui;Li TiePatent Agency Code: 31002Patent Agent: zhang zechunAbstract The present invention features that via doping to change the refractivity at the branch point and the technological process of first doping… Read More »

Re-doping method for vertically pulled monocrystalline silicon

Application Number: 00122075Application Date: 2000.08.16Publication Number: 1337476Publication Date: 2002.02.27Priority Information: International: C30B15/04Applicant(s) Name: Zhejiang Univ.Address: Inventor(s) Name: Shen Yijun;Ma Xiangyang;Tian DaxiPatent Agency Code: 33200Patent Agent: zhang fagaoAbstract The heavily-doping method for growth of vertical-pulling monocrystal silicon incldues the following steps: (1) using high-purity silicon to make "umbrella"-shaped doping device, and "umbrella handle" is crystal seed;… Read More »

One-step hydrolysis process of producing active white carbon from silicon tetrafluoride by product of phosophate fertilizer plant

Application Number: 00112161Application Date: 2000.03.23Publication Number: 1267634Publication Date: 2000.09.27Priority Information: International: C01B33/113;C09C1/28Applicant(s) Name: Li YuanzhiAddress: Inventor(s) Name: Li Yuanzhi;Fan YiningPatent Agency Code: 32204Patent Agent: chen jianheAbstract Silicon tetrafluoride gas after dedusted and purified is introduced directly into deionized water containing proper amount of surfactant while fast stirring for hydrolysis, the hydrolysis temperature is 20-80 deg.c… Read More »

Integrated silicon microresistance type acceleration sensor and its manufacturing method

Application Number: 00126172Application Date: 2000.08.25Publication Number: 1281986Publication Date: 2001.01.31Priority Information: International: G01D5/16;G01P15/12Applicant(s) Name: Micron & Nanometer Technology Research Centre, Huabei Engineering CollegeAddress: Inventor(s) Name: Zhang Wendong;Li Yonghong;Xiong JijunPatent Agency Code: 14105Patent Agent: li yiguiAbstract The present invention provides an integrated silicon microresistive acceleration transducer and its production method. it includes base, shell body and detection… Read More »

Preparation of nanometer-level silicon material

Application Number: 00117242Application Date: 2000.07.07Publication Number: 1277152Publication Date: 2000.12.20Priority Information: International: C01B33/021Applicant(s) Name: Zhongshan Univ.Address: Inventor(s) Name: Xu Ningsheng;Wu Zhisheng;Deng ShaozhiPatent Agency Code: 44200Patent Agent: ye xianjingAbstract In the heating evaporation process, SiC powder is used as material and through vacuum pumping, introducing inert gas as protecting gas and heating at 1600-2000 deg.C for one… Read More »

Process for preparing silicon carbide with by-product of graphite blocks

Application Number: 00122108Application Date: 2000.07.17Publication Number: 1334236Publication Date: 2002.02.06Priority Information: International: C01B31/04;C01B31/36Applicant(s) Name: Yin ZhongfuAddress: Inventor(s) Name: Yin ZhongfuPatent Agency Code: 21212Patent Agent: li hongfuAbstract A process for preparing silicon carbide as primary product and graphite blocks as by-product features that the core material of furnace is the charcoal blocks generated by calcining waste and… Read More »

Deep silicon slot technology

Application Number: 00112286Application Date: 2000.05.16Publication Number: 1283869Publication Date: 2001.02.14Priority Information: International: H01L21/76Applicant(s) Name: Wuxi Microelectronic Science and Research CenterAddress: Inventor(s) Name: Zheng YijunPatent Agency Code: 32104Patent Agent: cao zuliangAbstract A technology for making deep silicon slot includes oxidizing to generate a layer of medium film (hundreds nms-one micron in thickness) on silicon substrate, coating photoresist… Read More »

Improved method for simulating silicon device on insulator

Application Number: 00126190Application Date: 2000.08.31Publication Number: 1287333Publication Date: 2001.03.14Priority Information: 1999/9/2 FR 09/388,594International: G06G7/48;H01L21/84;H01L27/12Applicant(s) Name: International Business Machine Corp.Address: Inventor(s) Name: George E. Smith;III;Farleyboz. Athadelargy;Paul.D. ManchePatent Agency Code: 11038Patent Agent: fu jianjunAbstract To simulate an SOI element by setting a floating body voltage to an optional desired value at the optional point of time during… Read More »

Silicon mixed with structural oxygen, production method and use thereof

Application Number: 00118627Application Date: 2000.06.16Publication Number: 1278565Publication Date: 2001.01.03Priority Information: 1999/6/17 DE 19927604.8International: C30B29/06;H01L31/0256Applicant(s) Name: Bayer Co.Address: Inventor(s) Name: C. Haysler;H. U. Herfuss;W. KerkerPatent Agency Code: 72001Patent Agent: lu xinhuaAbstract The present invention relates to silicon with a high oxygen content and, at the same time, a high density of crystal lattice dislocations, and to… Read More »

Process for selectively preparing semispherical silicon grain

Application Number: 00122773Application Date: 2000.08.14Publication Number: 1338776Publication Date: 2002.03.06Priority Information: International: H01L21/8242Applicant(s) Name: Lianhua Electronic Co LtdAddress: Inventor(s) Name: Wu DeyuanPatent Agency Code: 11105Patent Agent: tao fengbeiAbstract A process for selectively preparing semi-spherical silicon grain is suitable for a substrate, on which a lower electrode with a protooxide layer of polysilicon capacitor is formed, and… Read More »

Modifier for silicon modified asphalt and its preparing method

Application Number: 00113119Application Date: 2000.08.18Publication Number: 1339524Publication Date: 2002.03.13Priority Information: International: C08K3/36;C08K9/00;C08L95/00Applicant(s) Name: Yu QianAddress: Inventor(s) Name: Yu QianPatent Agency Code: 53100Patent Agent: xu lingjuAbstract The powdered asphalt modifier is prepared by using diatomite as raw material and through low temperature roasting and air separation to purity and modify. Asphalt modified by the modifier has… Read More »

Production process of polycrystalline silicon metal gate by using nitriding process

Application Number: 00126366Application Date: 2000.09.06Publication Number: 1341955Publication Date: 2002.03.27Priority Information: International: H01L21/28;H01L21/283;H01L21/324Applicant(s) Name: Lianhua Electronic Cod. Ltd.Address: Inventor(s) Name: Zeng Lingxu;Chen MingcongPatent Agency Code: 31100Patent Agent: wu rongjunAbstract The invention discloses a method to form grid electrode made from polysiliconized metal. The method at least provides a layer of oxide of grid electrode on substrate,… Read More »

Manufacture of integrated minuature movable silicon mechanical-structure on glass substrate

Application Number: 00119498Application Date: 2000.07.21Publication Number: 1277142Publication Date: 2000.12.20Priority Information: International: B81C1/00;H01L21/84Applicant(s) Name: Shanghai Inst. of Metallurgy, Academia SinicaAddress: Inventor(s) Name: Xiong Xingguo;Lu Deren;Wang WeiyuanPatent Agency Code: 31002Patent Agent: zhang zechunAbstract By means of electrostatic silicon-glass bonding technology, sensitive monocrystal silicon structure is manufactured on glass substrate. In the position of the silicon chip bonding… Read More »

Macroporous silicon dioxide carrier and its preparing method

Application Number: 00122921Application Date: 2000.08.22Publication Number: 1339329Publication Date: 2002.03.13Priority Information: International: B01D15/08;B01J13/02;B01J20/10;C04B35/14;G01N30/48Applicant(s) Name: China Petrochemical Corp.Address: Inventor(s) Name: Ling FengxiangPatent Agency Code: 21102Patent Agent: li weiAbstract By means of high temperature roasting and pore expanding process utilizing chemical pore expanding agent, industrial stacked porous silica gel microball with specific surface area of 90-110 sq m/g,… Read More »

X-type silicon microstrain solid-state piezo-resistance sensor and its making technology

Application Number: 00113961Application Date: 2000.11.01Publication Number: 1293356Publication Date: 2001.05.02Priority Information: International: G01D5/16;G01L1/20Applicant(s) Name: Xi'an Jiaotong UnivAddress: Inventor(s) Name: Jiang Zhuangde;Zhao YulongPatent Agency Code: 61200Patent Agent: jia yujianAbstract An X-type microstrain solid-state piezo-resistance silicon sensor is prepared from silicon nitride through photoetching to form X-shaped 4-terminal element pattern, mask etching, injecting semiconductor material into silicon to… Read More »

Substrate junction isolated integrated silicon inductor and its making method

Application Number: 00119635Application Date: 2000.08.18Publication Number: 1281231Publication Date: 2001.01.24Priority Information: International: H01F17/00;H01F41/00;H01L21/70Applicant(s) Name: Shanghai Inst of Metallurgy, Chinese Academy of SciencesAddress: Inventor(s) Name: Liu Chang;Chen XueliangPatent Agency Code: 31002Patent Agent: xiao jiannanAbstract A substrate junction isolated integrated silicon inductor is made up through generating oxidized layer on silicon substrate, generating ion injection window by a… Read More »

Silicon molecular sieve and its synthesizing process

Application Number: 00123576Application Date: 2000.08.23Publication Number: 1338427Publication Date: 2002.03.06Priority Information: International: C01B37/02Applicant(s) Name: Chinese Petro-Chemical Co LtdAddress: Inventor(s) Name: Cheng Shibiao;Wu Wei;Sun BinPatent Agency Code: 72001Patent Agent: xu shuAbstract A silicon molecular sieve with MFI crystal structure, concave-convex cavities on the surface of its crystal grain, BET specific surface area greater than 430 sq.m/g and… Read More »

Production process of oriented silicon steel sheet through flame heating

Application Number: 00114320Application Date: 2000.01.06Publication Number: 1258751Publication Date: 2000.07.05Priority Information: International: C21D8/12Applicant(s) Name: Wuhan Iron & Steel (Group) Corp.Address: Inventor(s) Name: Ying Hong;Cao Yang;Nan ZhiqiPatent Agency Code: 42102Patent Agent: duan jiaojiaoAbstract The oriented silicon steel sheet producing process through flame heating in a non-oriented silicon steel sheet producing equipment includes the steps of igniting the… Read More »

Semiconductor structure having crystalline alkaline earth metal oxide interface with silicon

Application Number: 00120218Application Date: 2000.07.13Publication Number: 1334595Publication Date: 2002.02.06Priority Information: International: H01L21/00;H01L21/20;H01L29/04;H01L29/12Applicant(s) Name: Motorola Inc.Address: Inventor(s) Name: Wang Jun;W.J. Ums;J.A. HolmarkPatent Agency Code: 11038Patent Agent: fu jianjunAbstract A structure of semiconductor incldues silicon substrate, a layer or multi layers of monocrystal oxide. An boundary surface between the silicon substrate and the layer or multi layers… Read More »

Silicon molecular sieve and its preparing process

Application Number: 00123577Application Date: 2000.08.23Publication Number: 1338428Publication Date: 2002.03.06Priority Information: International: C01B37/02Applicant(s) Name: Chinese Petro-Chemical Co LtdAddress: Inventor(s) Name: Cheng Shibiao;Wu Wei;Su BinPatent Agency Code: 72001Patent Agent: xu shuAbstract A silicom molecular sieve with MFI crystal structure, concave-convex cavities on the surface of its crystal grain, BET specific surface area greater than 450 sq.m/g and… Read More »

Technology for producing wide band of orientated silicon steel with thickness less than or equal to 0.15mm

Application Number: 00114390Application Date: 2000.03.03Publication Number: 1264748Publication Date: 2000.08.30Priority Information: International: C21D8/12;C22C38/16Applicant(s) Name: Wuhan Iron and Steel (Group) Co.Address: Inventor(s) Name: Ji Fuxiang;Tao Jijun;Ying HongPatent Agency Code: 42102Patent Agent: duan jiaojiaoAbstract A technology for manufacturing wide band of orientated silicon steel with thickness less than 0.15 mm features that its main components are C (0.042-0.046… Read More »

Method for mfg. semioconductor structure having crystalline alkaline earth metal oxide interface with silicon

Application Number: 00120260Application Date: 2000.07.14Publication Number: 1334593Publication Date: 2002.02.06Priority Information: International: C30B25/00;H01L21/00;H01L21/20Applicant(s) Name: Motorola Inc.Address: Inventor(s) Name: Yu Zhiyi;L. Drupade;K.D. OwenjaldPatent Agency Code: 11038Patent Agent: fu jianjunAbstract A method to fabricate the structure of semiconductor includes following steps: (1) providing a surface with silicon substrate, (2) forming a boundary surface in characters as single atom… Read More »

Process for preparation of olefines in existing of dialkoxy silicon cyclohexylane

Application Number: 00124266Application Date: 2000.05.18Publication Number: 1285360Publication Date: 2001.02.28Priority Information: 1999/5/18 FR 99/06279International: C07F7/18;C08F4/646;C08F4/656;C08F10/00Applicant(s) Name: Atophna SAAddress: Inventor(s) Name: C. Gerisen;D. Bate-Kutero;D. KuteroPatent Agency Code: 72001Patent Agent: lu xinhuaAbstract The invention relates to dialkoxysilacyclohexane, preparation method thereof, and use as electron donor during polymerization of olefin such as propylene or ethane. In at least one… Read More »

One-step process for preparing reactive sintered ceramic material of silicon carbonate from pure carbon powder dispersed in water base

Application Number: 00114425Application Date: 2000.03.15Publication Number: 1264687Publication Date: 2000.08.30Priority Information: International: C04B35/573Applicant(s) Name: Wuhan Polytechnical Univ.Address: Inventor(s) Name: Wu Qide;Wei Mingkun;Wang HuaidePatent Agency Code: 42102Patent Agent: wang yuhuaAbstract A process for preparing high-performance reactive sintered ceramic of silicon carbide from pure carbon powder and waer as disperser includes adding additive to prepare high-dispersivity water-base slurry,… Read More »

Silicon complementary metal oxide semiconductor body contact on insulator formed by grating

Application Number: 00120329Application Date: 2000.07.12Publication Number: 1280388Publication Date: 2001.01.17Priority Information: 1999/7/13 US 09/351,647International: H01L21/786;H01L21/84Applicant(s) Name: IBM Co.Address: Inventor(s) Name: Michael J. Hagruf;Jack A. MangrimanPatent Agency Code: 11038Patent Agent: wang yonggangAbstract A structure and process for making a semiconductor device with SOI body contacts under the gate conductor. The gate conductor is partitioned into segments and… Read More »