Tag Archives: transistor

Method of forming silicon-germanium base zone of heterojunction bipolar transistor

Application Number  00129493 Application Date  2000.12.29 Publication Number  1304169 Publication Date  2001.07.18 Priority Information   2000/1/10 US 09/480033   International Classification  H01L21/20;H01L21/328   Applicant(s) Name  International Business Machine Corp.   Address     Inventor(s) Name  Huang Fengyi   Patent Agency Code  72001 Patent Agent  chen ji AbstractA process for forming a silicon-germanium base of a… Read More »

Mixed 5F2 unit layout used in embedding surface strip directed at vertical transistor

Application Number: 00118610Application Date: 2000.06.16Publication Number: 1281253Publication Date: 2001.01.24Priority Information: 1999/6/23 US 09/339,271International: H01L21/336;H01L21/82;H01L27/04Applicant(s) Name: IBM Corp.Address: Inventor(s) Name: U. Gluenin;K. J. LadonsPatent Agency Code: 11038Patent Agent: wang yonggangAbstract A method and structure for an integrated circuit chip which includes forming a storage capacitor in a vertical opening in a horizontal substrate, forming a conductive… Read More »

Mfg. for 5F2 unit of gate conductor having vertical transistor and alignment burying strip

Application Number: 00118877Application Date: 2000.06.22Publication Number: 1331489Publication Date: 2002.01.16Priority Information: International: H01L21/82;H01L27/04Applicant(s) Name: IBM CorpAddress: Inventor(s) Name: Ulrich Grinin;Carl J. RadansPatent Agency Code: 11038Patent Agent: wang yonggangAbstract A technology for preparing 5F2 unit containing vertical transistor and grid conductor pointed at mask strip includes preparing storage element in substrate, photoetching to form grid window, making… Read More »

Film transistor array and its producing method

Application Number: 00120336Application Date: 2000.07.06Publication Number: 1280308Publication Date: 2001.01.17Priority Information: 1999/7/7 JP 193187/99International: G02F1/133;G09G3/18Applicant(s) Name: Matsushita Electric Industrial Co., Ltd.Address: Inventor(s) Name: Gomikura Hiroki;Uno MitsuhiroPatent Agency Code: 31100Patent Agent: hong lingAbstract A display device driving circuit comprising a thin film transistor array in combination with a charge capacitor and its manufacturing method in which the… Read More »

Structure of transistor having parameters capable of adjusting independently, and process integration

Application Number: 00120498Application Date: 2000.07.12Publication Number: 1286495Publication Date: 2001.03.07Priority Information: 1999/7/22 US 09/359,291International: H01L21/265;H01L21/336;H01L21/82;H01L29/786Applicant(s) Name: IBM Corp.Address: Inventor(s) Name: L. Divacaruny;J.P. Gambino;J.A. MandelPatent Agency Code: 11038Patent Agent: wang yonggangAbstract The process rules for manufacturing semiconductor devices are modified to provide dual work-function doping, greatly reducing thermal budget and boron penetration concerns. The method also relaxes… Read More »

Thin-film transistor LCD and its manufacture

Application Number: 00121925Application Date: 2000.07.25Publication Number: 1335533Publication Date: 2002.02.13Priority Information: International: G02F1/136Applicant(s) Name: Daqi Science &. Technology Co., Ltd.Address: Inventor(s) Name: Weng JiafanPatent Agency Code: 11105Patent Agent: tao fengbeiAbstract The thin-film transistors for the thin-film transistor LCD is manufactured by using metal electrode layer as mask. During photoetching and doping silicon layer to form source/drain… Read More »

Superconducting field effect transistor with inverted MISFET structure

Application Number: 00122233Application Date: 1991.12.06Publication Number: 1323070Publication Date: 2001.11.21Priority Information: 1991/1/7 EP 91810006.6International: H01L39/22Applicant(s) Name: International Business Machine Corp.Address: Inventor(s) Name: Bednortz.J. Gorge;Manhart.J. Dieter;Millar.C. AlexanderPatent Agency Code: 11038Patent Agent: wang yonggangAbstract This field-effect transistor comprises a conductive substrate (2) serving as the gate electrode, an insulating barrier layer (3), and a superconducting channel layer (1)… Read More »

Method for operation of capacitor thin film transistor array

Application Number: 00122687Application Date: 2000.08.16Publication Number: 1285568Publication Date: 2001.02.28Priority Information: 1999/8/18 US 09/376,925International: G06K9/62Applicant(s) Name: Thomson Licensing Corp.Address: Inventor(s) Name: Michael S. Kein;Jin HongjinPatent Agency Code: 11105Patent Agent: ma yingAbstract A method of scanning a matrix of capacitors, with an associated matrix of TFT devices which are connected to respective capacitors, includes scanning the matrix… Read More »

Shape-changed hetrointerface bipolar transistor

Application Number: 00124312Application Date: 2000.09.04Publication Number: 1296291Publication Date: 2001.05.23Priority Information: 1999/10/7 US 60/158026International: H01L29/737Applicant(s) Name: Wenmao Semiconductor Co., Ltd.Address: Inventor(s) Name: Zhao Pengsheng;Wu Zhanxing;Lin YanjinPatent Agency Code: 11021Patent Agent: zhu liguangAbstract The present invention relates to a deformation heterojunction bipolarity transistor produced by using large-size gallium arsenide wafer material structure. Said material structure consists of… Read More »

Technology for manufacturing electronic elements of thin-film transistor display

Application Number: 00126054Application Date: 2000.08.29Publication Number: 1340847Publication Date: 2002.03.20Priority Information: International: G02F1/136;G09F9/30;H01L21/00;H01L29/786Applicant(s) Name: Daqi Science and Technology Co LtdAddress: Inventor(s) Name: Weng JiapanPatent Agency Code: 11105Patent Agent: tao fengbeiAbstract A technology for making the thin-film transistor display includes such steps as depositing a first metal layer on the surface of substrate, limiting a pattern to… Read More »

Flux for hot dip coating of tin into lead of transistor

Application Number: 00112453Application Date: 2000.08.08Publication Number: 1337294Publication Date: 2002.02.27Priority Information: International: B23K35/363;C23C2/08Applicant(s) Name: China Huajing Electronics Group Corp.Address: Inventor(s) Name: Li BingPatent Agency Code: 32104Patent Agent: nie hanqinAbstract The present invention relates to a scaling powder for tinning lead wire of transistor. It is characterized by that its composition includes (wt%) 5-10% of zinc chloride,… Read More »

Method of manufacturing transistor for semiconductor device

Application Number: 00109713Application Date: 2000.06.29Publication Number: 1284743Publication Date: 2001.02.21Priority Information: 1999/6/29 KR 25429/1999International: H01L21/336;H01L21/44Applicant(s) Name: Hyundai Electronics INdustiese Co., Ltd.Address: Inventor(s) Name: Lee Jong-HoPatent Agency Code: 11219Patent Agent: gu huiminAbstract A method of manufacturing a transistor having an elevated drain in a substrate includes the steps of: forming a gate structure on the substrate; providing… Read More »

Transistor with high electron mobility and its preparing process

Application Number: 00109356Application Date: 2000.05.31Publication Number: 1326229Publication Date: 2001.12.12Priority Information: International: H01L21/335;H01L29/772;H01L29/812Applicant(s) Name: Inst of Semiconductors, Chinese Academy of SciencesAddress: Inventor(s) Name: Pan ZhongPatent Agency Code: 00000Patent Agent: Abstract A transistor with high electron mobility is composed of GaAs substrate, buffer layer, electronic channel layer (GaInNAs), space layer, potential barrier layer, cap layers, source and… Read More »

Method for manufacturing thin film transistor and thin film transistor

Application Number: 00108644Application Date: 2000.05.09Publication Number: 1273436Publication Date: 2000.11.15Priority Information: 1999/5/10 JP 128121/99International: H01L21/336;H01L29/786Applicant(s) Name: Matsushita Electric Industrial Co., Ltd.Address: Inventor(s) Name: Kota Mamoru;Aiba IsaokoPatent Agency Code: 31100Patent Agent: zhang zhengquanAbstract A first insulation film is formed as a gate insulation film of a thin film transistor, and a gate electrode is formed on the… Read More »

Storage element distribution for reducing mutual influence between storage panel point and transistor

Application Number: 00104364Application Date: 2000.03.20Publication Number: 1267914Publication Date: 2000.09.27Priority Information: 1999/3/18 US 09/272215International: H01L21/82;H01L21/8239;H01L27/10Applicant(s) Name: Enfenieung Technology North America Co.Address: Inventor(s) Name: Y.-J. Park;C. J. Ladons;G. QuanklePatent Agency Code: 72001Patent Agent: liang yongAbstract A memory cell, in accordance with the invention, includes a trench formed in a substrate, and an active area formed in the… Read More »

Device having thin film transistor

Application Number: 00104152Application Date: 1994.06.10Publication Number: 1360349Publication Date: 2002.07.24Priority Information: 1993/6/12 JP 166115/93International: H01L27/12;H01L21/00Applicant(s) Name: Semiconductor Energy Laboratory Co., Ltd.Address: Inventor(s) Name: Miyanaga Teruji;Otani Hisashi;Teramoto AkiPatent Agency Code: 72001Patent Agent: zhang zhichengAbstract One kind or plural kinds of elements selected from a groups III, IV or V elements are introduced in an amorphous silicon film,… Read More »

Method for making superconductor field transistor with inverted MISFET structure

Application Number: 00103607Application Date: 1991.12.06Publication Number: 1269603Publication Date: 2000.10.11Priority Information: 1991/1/7 EP 91810006.6International: H01L21/336;H01L39/22Applicant(s) Name: International Business Machines Co.Address: Inventor(s) Name: Bedenotz J. Jodge;Manhart J. Diter;Miler C. AlexandaPatent Agency Code: 11038Patent Agent: feng xunAbstract This field-effect transistor comprises a conductive substrate (2) serving as the gate electrode, an insulating barrier layer (3), and a superconducting… Read More »

Method for combining overlay transistor part with wafer

Application Number: 00103473Application Date: 2000.03.13Publication Number: 1313631Publication Date: 2001.09.19Priority Information: International: H01L21/50Applicant(s) Name: Huatai Electronic Co LtdAddress: Inventor(s) Name: Xie Wenle;Zhuang Yongcheng;Huang NingPatent Agency Code: 11127Patent Agent: liu lingdiAbstract A method for combining semiconductor chip with base board includes such steps as presetting metal conductor bosses on crystal wafer, cutting to obtain chips, arranging metallic… Read More »

Double-field effect transistor chip and method for fixing the same chip

Application Number: 00102989Application Date: 2000.03.14Publication Number: 1267911Publication Date: 2000.09.27Priority Information: 1999/3/16 JP 69938/1999International: H01L21/60;H01L23/48Applicant(s) Name: Rohm Co., Ltd.Address: Inventor(s) Name: Tanata Naoya;Yokoyama Eiji;Aoyama NaokiPatent Agency Code: 11021Patent Agent: zhu jinguiAbstract To obtain the field effect transistor chip which can be formed at low manufacturing cost and mounting cost. Two field effect transistors are mounted on… Read More »

Insulated gate transistor

Application Number: 00101998Application Date: 2000.02.04Publication Number: 1263360Publication Date: 2000.08.16Priority Information: 1999/2/4 JP 26967/1999International: H01L29/70;H01L29/78Applicant(s) Name: Hitachi Ltd.Address: Inventor(s) Name: Uchiumi Tomoyuki;Oseki Shoichi;Suda KoichiPatent Agency Code: 11038Patent Agent: du rixinAbstract An insulated gate transistor comprising a first semiconductor region, a second semiconductor region comprising plural portions, a third semiconductor region, a fourth semiconductor region, a first… Read More »

Formation of controllable slot top isolated layer for vertical transistor

Application Number: 00101981Application Date: 2000.02.01Publication Number: 1263358Publication Date: 2000.08.16Priority Information: 1999/2/1 US 09/241756International: H01L21/76Applicant(s) Name: Yinfeeneyan Technology North American Inc.Address: Inventor(s) Name: U. Gelening;J. Bonetena;D. TobenPatent Agency Code: 72001Patent Agent: yang kaiAbstract A method for controlling isolation layer thickness in trenches for semiconductor devices includes the steps of providing a trench (14) having a conductive… Read More »

Linked-grid transistor

Application Number: 00100761Application Date: 2000.02.18Publication Number: 1260596Publication Date: 2000.07.19Priority Information: International: H01L29/72;H01L29/772Applicant(s) Name: Li SimingAddress: Inventor(s) Name: Li SimingPatent Agency Code: 11100Patent Agent: zhang weihuaAbstract The grid-coupled transistor includes silicon substrate, collector region, emitter region, base region, grid region and correspondent metal electrode layer, on the upper surface of silicon substrate there are several first… Read More »

Transistor of composite perovskite structure oxide membrane

Application Number: 00100368Application Date: 2000.01.19Publication Number: 1306310Publication Date: 2001.08.01Priority Information: International: H01L21/00;H01L29/12;H01L29/66Applicant(s) Name: Inst of Physics, Chinese Academy of SciencesAddress: Inventor(s) Name: Lu Huibin;Dai Shouyu;Chen ZhenghaoPatent Agency Code: 00000Patent Agent: Abstract A perofskite oxide composite film transistor is produced by laminating of p-type and n-type of SrTiO3, BatiO3, YBCO and LaMnO3, thin film to form… Read More »

Barium titanate transistor

Application Number: 00100367Application Date: 2000.01.19Publication Number: 1306309Publication Date: 2001.08.01Priority Information: International: H01L21/328;H01L29/12;H01L29/70Applicant(s) Name: Inst of Physics, Chinese Academy of SciencesAddress: Inventor(s) Name: Lu Huibin;Dai Shouyu;Chen FanPatent Agency Code: 00000Patent Agent: Abstract A titanate barium transistor is produced by making the laminated extension of adulteration of n-type, p-type titanate barium film together to form p-n junction,… Read More »

Strontium titanate transistor

Application Number: 00100366Application Date: 2000.01.19Publication Number: 1306308Publication Date: 2001.08.01Priority Information: International: H01L21/328;H01L29/12;H01L29/70Applicant(s) Name: Inst of Physics, Chinese Academy of SciencesAddress: Inventor(s) Name: Lu Huibin;Dai Shouyu;Chen FanPatent Agency Code: 00000Patent Agent: Abstract A strontium titanate transistor is produced by making the laminated extension of the adulteration n-type and p-type strontium titante film together to form p-n… Read More »